Philips BFQ67W Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFQ67W
NPN 8 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability
PINNING
PIN DESCRIPTION
Code: V2
1 base
2 emitter
3 collector
handbook, 2 columns
3
• SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
12
Top view
MBC870
It is designed for wideband
applications such as satellite TV
Fig.1 SOT323.
tuners and RF portable
communications equipment up to
2 GHz.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
F noise figure I
collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−10 V
DC collector current −−50 mA
total power dissipation up to Ts=118°C; note 1 −−300 mW
DC current gain IC= 15 mA; VCE= 5 V; Tj=25°C 60 100 −
transition frequency IC= 15 mA; VCE= 8 V; f = 2 GHz;
T
=25°C
amb
maximum unilateral power gain Ic= 15 mA; VCE= 8 V; f = 1 GHz;
T
=25°C
amb
= 5 mA; VCE= 8 V; f = 1 GHz − 1.3 − dB
c
− 8 − GHz
− 13 − dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
P
T
T
CBO
CEO
EBO
C
tot
stg
j
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 2.5 V
DC collector current − 50 mA
total power dissipation up to Ts=118°C; note 1 − 300 mW
storage temperature −65 150 °C
junction temperature − 175 °C
Note
is the temperature at the soldering point of the collector tab.
1. T
s
September 1995 2
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
R
th j-s
thermal resistance from junction to
soldering point
Note
is the temperature at the soldering point of the collector tab.
1. T
s
CHARACTERISTICS
=25°C, unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
F noise figure Γ
collector cut-off current IE= 0; VCB=5 V −−50 nA
DC current gain IC= 15 mA; VCE= 5 V 60 100 −
collector capacitance IE=ie= 0; VCB= 8 V; f = 1 MHz − 0.7 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 1.3 − pF
feedback capacitance IC= 0; VCB= 8 V; f = 1 MHz − 0.5 − pF
transition frequency IC= 15 mA; VCE= 8 V; f = 2 GHz;
T
amb
maximum unilateral power gain
(note 1)
IC= 15 mA; VCE= 8 V; f = 1 GHz
T
amb
I
C
T
amb
s
f=1GHz
Γ
s
f=1GHz
Γ
s
f=2GHz
I
C
f = 2 GHz; Zs=60Ω
Γ
s
f=2GHz
I
C
f = 2 GHz; Zs=60Ω
up to Ts=118°C; note 1 190 K/W
− 8 − GHz
=25°C
− 13 − dB
=25°C
= 15 mA; VCE= 8 V; f = 2 GHz;
− 8 − dB
=25°C
= Γ
= Γ
= Γ
= 5 mA; VCE=8 V;
= Γ
= 5 mA; VCE=8 V;
= 5 mA; VCE=8 V;
opt;IC
= 15 mA; VCE=8 V;
opt;IC
= 5 mA; VCE=8 V;
opt;IC
= 15 mA; VCE=8 V;
opt;IC
− 1.3 − dB
− 2 − dB
− 2.2 − dB
− 2.5 − dB
− 2.7 − dB
− 3 − dB
Note
1. G
is the maximum unilateral power gain, assuming S12is zero and
UM
2
S
G
UM
--------------------------------------------------------------
10 log
1S
–
21
2
–
1S
11
22
dB.=
2
September 1995 3
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