Philips BFQ67 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BFQ67
NPN 8 GHz wideband transistor
Product specification
Supersedes data of September 1995
File under Discrete Semiconductors, SC14
1998 Aug 27
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
FEATURES
• High power gain
• Low noise figure
DESCRIPTION
Silicon NPN wideband transistor in a
plastic SOT23 package.
fpage
3
• High transition frequency
• Gold metallization ensures
excellent reliability.
APPLICATIONS
Satellite TV tuners and RF portable
communications equipment up to
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
12
Top view
Marking code: V2p.
MSB003
2 GHz.
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
V
I
P
h
f
G
CBO
CEO
C
tot
FE
T
UM
collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−10 V
collector current (DC) −−50 mA
total power dissipation Ts≤ 97 °C; note 1 −−300 mW
DC current gain IC= 15 mA; VCE= 5 V 60 100 −
transition frequency IC= 15 mA; VCE=8V − 8 − GHz
maximum unilateral
IC= 15 mA; VCE= 8 V; f = 1 GHz − 14 − dB
power gain
F noise figure I
= 5 mA; VCE= 8 V; f = 1 GHz − 1.3 − dB
C
Note
is the temperature at the soldering point of the collector tab.
1. T
s
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
P
T
T
CBO
CEO
EBO
C
tot
stg
j
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 50 mA
total power dissipation Ts≤ 97 °C; note 1 − 300 mW
storage temperature range −65 +150 °C
junction temperature − 175 °C
Note
1. T
is the temperature at the soldering point of the collector tab.
s
1998 Aug 27 2
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
Note
is the temperature at the soldering point of the collector lead.
1. T
s
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
F noise figure Γ
thermal resistance from junction to soldering point note 1 260 K/W
collector cut-off current IE= 0; VCB=5V −−50 nA
DC current gain IC= 15 mA; VCE= 5 V 60 100 −
collector capacitance IE=ie= 0; VCB= 8 V; f = 1 MHz − 0.7 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 1.3 − pF
feedback capacitance IC= 0; VCB= 8 V; f = 1 MHz − 0.5 − pF
transition frequency IC= 15 mA; VCE=8V − 8 − GHz
maximum unilateral power gain
(note 1)
IC= 15 mA; VCE=8V;
T
=25°C; f = 1 GHz
amb
I
= 15 mA; VCE=8V; f=2GHz − 8 − dB
C
= Γ
; IC= 5 mA; VCE=8V;
s
opt
T
=25°C; f = 1 GHz
amb
Γ
= Γ
; IC= 15 mA; VCE=8V;
s
opt
T
=25°C; f = 1 GHz
amb
= Γ
Γ
T
I
T
Γ
T
I
T
C
C
; IC= 5 mA; VCE=8V;
s
opt
=25°C; f = 2 GHz
amb
= 5 mA; VCE=8V;
=25°C; f = 2 GHz; Zs=60Ω
amb
= Γ
; IC= 15 mA; VCE=8V;
s
opt
=25°C; f = 2 GHz
amb
= 15 mA; VCE=8V;
=25°C; f = 2 GHz; Zs=60Ω
amb
− 14 − dB
− 1.3 − dB
− 1.7 − dB
− 2.2 − dB
− 2.5 − dB
− 2.7 − dB
− 3 − dB
Note
1. G
is the maximum unilateral power gain, assuming S12 is zero and .
UM
1998 Aug 27 3
2
S
G
UM
10 log
--------------------------------------------------------------
1
–
21
2
S
1
S
–
11
dB=
2
22
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
0 50 100 200
150
Ts (oC)
Fig.2 Power derating curve.
MRA614
120
handbook, halfpage
h
FE
80
40
0
0
VCE=5V.
20 40
MBB301
I (mA)
C
Fig.3 DC current gain as a function of collector
current, typical values.
60
0.8
handbook, halfpage
C
re
(pF)
0.6
0.4
0.2
0
0 5 10 15
IC=ic= 0; f= 1 MHz.
VCB (V)
Fig.4 Feedback capacitance as a function of
collector-base voltage, typical values.
MRA607
10
handbook, halfpage
f
T
(GHz)
8
6
4
2
0
01020 40
VCE= 8 V; T
=25°C; f = 2 GHz.
amb
30
Fig.5 Transition frequency as a function of
collector current, typical values.
MBB303
I (mA)
C
1998 Aug 27 4
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