Philips BFQ591 Technical data
查询BFQ591供应商查询BFQ591供应商
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D109
BFQ591
NPN 7 GHz wideband transistor
Product specification
Supersedes data of 2002 Jan 07
2002 Feb 04
Philips Semiconductors Product specification
NPN 7 GHz wideband transistor BFQ591
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.
APPLICATIONS
Intended for applicationsin the GHz range such as MATV
or CATV amplifiers and RF communications subscribers
equipment.
DESCRIPTION
NPN wideband transistor in a SOT89 plastic package.
MARKING
TYPE NUMBER MARKING CODE
BFQ591 BCp
QUICK REFERENCE DATA
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
handbook, halfpage
123
Bottom view
Fig.1 Simplified outline (SOT89).
MBK514
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−15 V
collector current (DC) −−200 mA
total power dissipation Ts≤ 90 °C; note 1 −−2.25 W
DC current gain IC= 70 mA; VCE=8V 6090250
feedback capacitance IC= 0; VCB= 12 V; f = 1 MHz − 0.8 − pF
transition frequency IC= 70 mA; VCE=12V;
− 7 − GHz
f = 1 GHz
G
UM
2
|s
|
21
maximum unilateral power gain IC= 70 mA; VCE=12V;
f = 900 MHz; T
amb
=25°C
insertion power gain IC= 70 mA; VCE=12V;
f = 900 MHz; T
amb
=25°C
− 11 − dB
− 10 − dB
Note
is the temperature at the soldering point of the collector pin.
1. T
s
2002 Feb 04 2
Philips Semiconductors Product specification
NPN 7 GHz wideband transistor BFQ591
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. Tsis the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 3V
collector current (DC) − 200 mA
total power dissipation Ts≤ 90 °C; note 1 − 2.25 W
storage temperature −65 +150 °C
junction temperature − 175 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction
Ts≤ 90 °C; note 1 38 K/W
to soldering point
Note
is the temperature at the soldering point of the collector pin.
1. T
s
2002 Feb 04 3
Philips Semiconductors Product specification
NPN 7 GHz wideband transistor BFQ591
CHARACTERISTICS
Tj=25°C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
h
FE
C
re
f
T
G
UM
2
|s
|
21
V
o
collector-base breakdown voltage IC= 0.1 mA; IE=0 −−20 V
collector-emitter breakdown
IC= 0.1 mA; IB=0 −−15 V
voltage
emitter-base breakdown voltage IE= 0.1 mA; IC=0 −−3V
collector-base leakage current IE= 0; VCB=10 −−100 nA
DC current gain IC=70mA; VCE=8V 6090250
feedback capacitance IC= 0; VCB= 12 V; f = 1 MHz − 0.8 − pF
transition frequency IC= 70 mA; VCE=12V;
− 7 − GHz
f = 1 GHz
maximum unilateral power gain;
note 1
IC= 70 mA; VCE=12V;
T
=25°C
amb
f = 900 MHz − 11 − dB
f = 2 GHz − 5.5 − dB
insertion power gain IC= 70 mA; VCE=12V;
f = 1 GHz; T
amb
=25°C
− 10 − dB
output voltage note 2 − 700 − mV
Notes
2
s
1. G
is the maximum unilateral power gain, assuming s12is zero and .
UM
G
UM
10 log
-------------------------------------------------------1s
21
2
–()1s
11
–()
2. dim= 60 dB (DIN45004B); Vp=Vo; Vq=Vo −6 dB; fp= 795.25 MHz; fq= 803.25 MHz; fr= 803.25 MHz;
measured at f
= 793.25 MHz.
(p+q+r)
dB=
2
22
2002 Feb 04 4
Loading...