Philips BFQ270 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFQ270
NPN 6 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors Product specification
NPN 6 GHz wideband transistor BFQ270
FEATURES
• High power gain
• Emitter-ballasting resistors for
good thermal stability
• Gold metallization ensures
excellent reliability.
DESCRIPTION
PINNING
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
age
4
3
1
Silicon NPN transistor mounted in a
4-lead dual-emitter SOT172A1.
envelope with a ceramic cap. All
Top view
2
MBC869
leads are isolated from the mounting
base.
It is primarily intended for use in
MATV and CATV amplifiers.
Fig.1 SOT172A1.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
V
O
collector-base voltage open emitter −−25 V
collector-emitter voltage open base −−19 V
DC collector current −−500 mA
total power dissipation up to Tc = 100 °C −−10 W
DC current gain IC = 240 mA; VCE = 18 V; Tj = 25 °C60−−
transition frequency IC = 240 mA; VCE = 18 V; f = 1 GHz;
T
= 25 °C
amb
maximum unilateral power gain IC = 240 mA; VCE = 18 V;
f = 800 MHz; T
amb
= 25 °C
output voltage dim = −60 dB; IC= 240 mA;
− 6 − GHz
− 10 − dB
− 1.6 − V
VCE = 18 V; RL = 75 Ω;
f
= 793.25 MHz
(p+q-r)
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
September 1995 2
Philips Semiconductors Product specification
NPN 6 GHz wideband transistor BFQ270
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOL PARAMETER THERMAL RESISTANCE
R
th j-c
collector-base voltage open emitter − 25 V
collector-emitter voltage open base − 19 V
emitter-base voltage open collector − 2V
DC collector current − 500 mA
total power dissipation up to Tc = 100 °C − 10 W
storage temperature −65 150 °C
junction temperature − 200 °C
thermal resistance from junction to case 10 K/W
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
C
C
C
C
f
T
G
V
d
FE
c
e
re
cs
UM
O
2
collector cut-off current IE = 0; VCB = 18 V −−100 µA
DC current gain IC = 240 mA; VCE = 18 V 60 110 −
collector capacitance IE = ie = 0; VCB = 18 V; f = 1 MHz − 3.6 − pF
emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 11 − pF
feedback capacitance IC = 0; VCB = 18 V; f = 1 MHz 2 2.6 − pF
collector-stud capacitance − 1.2 − pF
transition frequency IC = 240 mA; VCE = 18 V; f = 1 GHz;
T
= 25 °C
amb
maximum unilateral power gain
(note 1)
IC = 240 mA; VCE = 18 V;
f = 500 MHz; T
I
= 240 mA; VCE = 18 V; f = 1 GHz;
C
T
= 25 °C
amb
amb
= 25 °C
4.5 6 − GHz
− 16 − dB
− 10 − dB
output voltage note 2 − 1.6 − V
second order intermodulation
note 3 −−50 − dB
distortion
Notes
1. G
is the maximum unilateral power gain, assuming S12 is zero and
UM
2. dim = −60 dB (DIN 45004); IC = 240 mA; VCE = 18 V; RL = 75 Ω;
=
G
UM
--------------------------------------------------------------
10 log
1
S
–
2
S
21
2
1
S
–
11
22
dB
2
Vp = VO;fp = 795.25 MHz;
Vq = VO−6 dB; fq = 803.25 MHz;
Vr = VO−6 dB; fr = 805.25 MHz;
measured at f
= 793.25 MHz.
(p+q−r)
3. IC = 240 mA; VCE = 18 V; RL = 75 Ω;
Vp= Vq = VO = 50.5 dBmV = 335 mV;
f
= 810 MHz; fp = 250 MHz; fq= 560 MHz.
(p+q)
˙
September 1995 3
Philips Semiconductors Product specification
,
NPN 6 GHz wideband transistor BFQ270
L2
MBB488
V
CC
(1)
C8
C5 L6
C9
output
n–75 Ω
C6
handbook, full pagewidth
input
n–75 Ω
(1) +Vcis equivalent to VCE=Vc−Ic(A) ×17.
C1
V
bias
C7
R6
C2L1
L2
L1
R5
L3
C3
R1
C4
L4
L5
DUT
R2 R3 R4
Fig.2 Intermodulation and second order intermodulation distortion test circuit.
List of components (see test circuit)
DESIGNATION DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1 miniature ceramic plate capacitor 0.82 pF 2222 680 03827
C2, C5, C7, C8 multilayer ceramic capacitor 10 nF 2222 852 47103
C3 multilayer ceramic chip capacitor 2.2 pF 2222 855 12228
C4 (note 1) miniature ceramic plate capacitor 1 nF 2222 630 08102
C6 miniature ceramic plate capacitor 1.2 pF 2222 680 03128
C9 electrolytic capacitor 4.7 µF 2222 014 28478
L1 (note 1) 4.5 turns loosely wound 0.4 mm
enamelled copper wire
≈35 nH internal coil diameter
2 mm
L2 Ferroxcube choke 5 µH 3122 108 20153
ML1, ML6 microstripline 75 Ω width 2.46 mm;
length 9 mm
ML2, ML5 microstripline 75 Ω width 2.46 mm;
length 22 mm
ML3, ML4 microstripline 145 Ω width 0.5 mm;
length 12 mm
R1, R2, R3, R4 metal film resistor 68 Ω type MR25 2322 151 76819
R5 (note 1) metal film resistor 240 Ω type SFR16T 2322 180 73241
R6 metal film resistor 10 kΩ type SFR16T 2322 180 73103
Note
1. Components C4, L1, and R5 are mounted in a cavity in the brass ground plate.
The circuit is constructed on a printed circuit board and 10 mm thick brass ground plate, with a relative dielectric constant
= 2.2), thickness 1.57 mm; thickness of copper 0.017 mm (E.G. Rogers’ RT/Duroid 5880).
of (ε
r
September 1995 4
Loading...