Philips BFG92X User Manual

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ook, halfpage

M3D071

BFG92A/X

NPN 5 GHz wideband transistor

Product specification

1998 Sep 23

Supersedes data of 1995 Sep 12

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFG92A/X

FEATURES

• High power gain

• Low noise figure

• Gold metallization ensures

DESCRIPTION

Silicon NPN transistor in a 4-pin,
dual-emitter SOT143B plastic
package.

handbook, 2 columns

34

excellent reliability.

APPLICATIONS

Wideband applications in the UHF
and microwave range.

PINNING

PIN DESCRIPTION

1 collector
2 emitter
3 base
4 emitter

Marking code: V14.

12

Top view

MSB014

Fig.1 SOT143B.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V
V
I
P
C
f
G

CBO
CEO

C

tot

re

T

UM

collector-base voltage −−20 V
collector-emitter voltage −−15 V
collector current (DC) −−25 mA
total power dissipation Ts≤ 60 °C −−400 mW
feedback capacitance IC=ic= 0; VCB= 10 V; f = 1 MHz − 0.35 − pF
transition frequency IC= 15 mA; VCE= 10 V; f = 500 MHz 3.5 5 − GHz
maximum unilateral power

gain

IC= 15 mA; VCE=10V; T
f = 1 GHz

I

= 15 mA; VCE=10V; T

C

amb

amb

=25°C;

=25°C;

− 16 − dB

− 11 − dB

f = 2 GHz

F noise figure Γ

= Γ

; IC= 5 mA; VCE=10V;

s

opt

T

=25°C; f = 1 GHz

amb

− 2 − dB

1998 Sep 23 2

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFG92A/X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

Note

1. T

s

THERMAL CHARACTERISTICS

collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 2V
collector current (DC) − 25 mA
total power dissipation Ts≤ 60 °C; note 1 − 400 mW
storage temperature range −65 150 °C
junction temperature − 175 °C

is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point note 1 290 K/W

Note

1. T

is the temperature at the soldering point of the collector pin.

s

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

C

c

C

e

C

re

f

T

G

UM

F noise figure Γ

collector leakage current IE= 0; VCB=10V −−50 nA
DC current gain IC= 15 mA; VCE= 10 V 40 90 −
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 0.6 − pF
emitter capacitance IC=ic= 0; VEB= 10 V; f = 1 MHz − 0.9 − pF
feedback capacitance IC=ic= 0; VCB= 10 V; f = 1 MHz − 0.35 − pF
transition frequency IC= 15 mA; VCE= 10 V; f = 500 MHz 3.5 5 − GHz
maximum unilateral power

gain; note 1

IC= 15 mA; VCE=10V;
T

=25°C; f = 1 GHz

amb

I

= 15 mA; VCE=10V;

C

T

=25°C; f = 2 GHz

amb

= Γ

; IC= 5 mA; VCE=10V;

s

opt

T

=25°C; f = 1 GHz

amb

Γ

= Γ

; IC= 5 mA; VCE=10V;

s

opt

T

=25°C; f = 2 GHz

amb

− 16 − dB

− 11 − dB

− 2 − dB

− 3 − dB

Note

1. G

is the maximum unilateral power gain, assuming S12 is zero and

UM

1998 Sep 23 3

2

S

G

UM

10

-------------------------------------------------------------­1S

–()1S

21

2

11

–()

dB.log=

2

22

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFG92A/X

800

handbook, halfpage

P

tot

(mW)

600

400

200

0

0 50 100 200

150

Ts(

Fig.2 Power derating curve.

MBB963 - 1

o

C)

I (mA)

C

MCD074

120

handbook, halfpage

h

FE

80

40

0

0102030

VCE=10V.

Fig.3 DC current gain as a function of collector

current; typical values.

18

MCD075

V (V)

CB

0.6

handbook, halfpage

C

re

(pF)

0.4

0.2

0

0

IC=ic= 0; f= 1 MHz.

624

12

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

1998 Sep 23 4

handbook, halfpage

6

f

T

(GHz)

4

2

0

0102030

VCE= 10 V; T

=25°C; f = 500 MHz.

amb

Fig.5 Transition frequency as a function of

collector current; typical values.

MBB275

I (mA)

C

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFG92A/X

30

handbook, halfpage

gain
(dB)

20

10

0

0

VCE= 10 V; f = 500 MHz.

510

MSG

G

UM

15

20

I (mA)

Fig.6 Gain as a function of collector current;

typical values.

MCD077

C

UM

MCD078

I (mA)

C

25

30

handbook, halfpage

gain
(dB)

20

10

25

0

0

VCE= 10 V; f = 1 GHz.

5101520

MSG

G

Fig.7 Gain as a function of collector current;

typical values.

50

handbook, halfpage

gain
(dB)

40

30

20

10

0

10

VCE= 10 V; IC= 5 mA.

MSG

G

UM

2

10

10

MCD079

G

max

3

f
(MHz)

4

10

Fig.8 Gain as a function of frequency; typical

values.

1998 Sep 23 5

50

handbook, halfpage

gain
(dB)

40

30

20

10

0

10

VCE= 10 V; IC=15mA.

MSG

G

UM

G

max

2

10

3

10

f (MHz)

Fig.9 Gain as a function of frequency; typical

values.

MCD080

4

10

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFG92A/X

handbook, halfpage

4

F

(dB)

3

2

1

0

VCE=10V.

101

f = 2 GHz

1 GHz

500 MHz

I (mA)

C

Fig.10 Minimum noise figure as a function of

collector current; typical values.

MCD081

C

f (MHz)

MCD082

4

10

handbook, halfpage

2

10

4

F

(dB)

3

2

1

0

10

VCE=10V.

I = 15 mA

10 mA
5 mA

2

3

10

Fig.11 Minimum noise figure as a function of

frequency; typical values.

handbook, full pagewidth

Zo=50Ω.
Maximum stable gain = 23.9 dB.

unstable

region

+

j

0

– j

0.2

0.2

MSG

23.9 dB

stability circle

0.5

0.5

1

F = 1.6 dB

min

1

2 dB

3 dB

4 dB

OPT

25100.50.2 1

2

*

2

MCD083

Fig.12 Common emitter noise figure circles; typical values.

5

10

∞

10

5

1998 Sep 23 6

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFG92A/X

handbook, full pagewidth

Zo=50Ω.
Maximum stable gain = 19.9 dB.

1

stability circle

0.2

+ j

unstable region

0

– j

MSG

19.9 dB

0.2

0.5

0.5

OPT

*

F = 2.1 dB

min

10.2

2.5 dB
3 dB

4 dB

1

25100.5

2

2

MCD084

Fig.13 Common emitter noise figure circles; typical values.

5

10

∞

10

5

handbook, full pagewidth

Zo=50Ω.

1

0.5

5 dB

0.2

+ j

0

– j

0.2

G

max

*

12.5 dB
12 dB

0.5

F = 3 dB

min

10 dB

OPT

4 dB

3.5 dB

*

10.2

1

2

5100.5 2

2

MCD085

Fig.14 Common emitter noise figure circles; typical values.

5

10

∞

10

5

1998 Sep 23 7

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFG92A/X

handbook, full pagewidth

VCE= 10 V; IC=15mA.

1

0.5

0.2

+

j

0

– j

0.2

0.5

3 GHz

0.5 10.2 1052

1

2

5

10

∞

40 MHz

10

5

2

MCD086

Fig.15 Common emitter input reflection coefficient (S11); typical values.

handbook, full pagewidth

VCE= 10 V; IC=15mA.

o

90

180

o

135

o

40 MHz

1020304050

3 GHz

_

o

135

_90o

o

45

o

0

_

o

45

MCD072

Fig.16 Common emitter forward transmission coefficient (S21); typical values.

1998 Sep 23 8

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFG92A/X

o

90

handbook, full pagewidth

VCE= 10 V; IC=15mA.

handbook, full pagewidth

180

o

135

3 GHz

o

_

o

135

40

MHz

_90o

o

45

o

0

0.200.160.120.080.04

_

o

45

MCD071

Fig.17 Common emitter reverse transmission coefficient (S12); typical values.

1

0.5

2

0.2

+ j

0

– j

0.2

0.5

VCE= 10 V; IC=15mA.

0.5 10.2 1052

Fig.18 Common emitter output reflection coefficient (S22); typical values.

1998 Sep 23 9

1

3 GHz

40 MHz

2

5

10

∞

10

5

MCD073

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFG92A/X

SPICE parameters for BFR90A/X die

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 411.8 aA
2 BF 102.6 −
3 NF 997.2 m
4 VAF 62.67 V
5 IKF 3.200 A
6 ISE 4.010 fA
7 NE 1.577 −
8 BR 18.10 −
9 NR 996.2 m
10 VAR 3.369 V
11 IKR 1.281 A
12 ISC 279.9 aA
13 NC 1.075 −
14 RB 10.00 Ω
15 IRB 1.000 µA
16 RBM 10.00 Ω
17 RE 1.164 Ω
18 RC 2.320 Ω
19 (note 1) XTB 0.000 −
20 (note 1) EG 1.110 eV
21 (note 1) XTI 3.000 −
22 CJE 890.5 fF
23 VJE 600.0 mV
24 MJE 258.5 m
25 TF 15.49 ps
26 XTF 39.14 −
27 VTF 2.152 V
28 ITF 213.7 mA
29 PTF 0.000 deg
30 CJC 546.5 fF
31 VJC 380.8 mV
32 MJC 202.9 m
33 XCJC 150.0 m
34 TR 5.618 ns
35 (note 1) CJS 0.000 F

SEQUENCE No. PARAMETER VALUE UNIT

36 (note 1) VJS 750.0 mV
37 (note 1) MJS 0.000 −
38 FC 850.0 m

Note

1. These parameters have not been extracted,
the default values are shown.

handbook, halfpage

L1 L2

B

C

QLB= 50; QLE= 50.
QL

(f) = QL

B,E

fc= scaling frequency = 100 MHz.

L

be ce

√ (f/fc).

B,E

C

cb

B

E'

L

E

L3

E

C

MBC964

Fig.19 Package equivalent circuit SOT143B.

List of components (see Fig.19)

DESIGNATION VALUE UNIT

C

be

C

cb

C

ce

84 fF
17 fF

191 fF
L1 0.12 nH
L2 0.21 nH
L3 0.06 nH
L

B

L

E

0.95 nH

0.40 nH

CB' C'

1998 Sep 23 10

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFG92A/X

PACKAGE OUTLINES

Plastic surface mounted package; 4 leads SOT143B

D

y

e

b

p

B

w M

E

v M

A

B

H

E

A

X

34

Q

A

A

1

21

L

b

1

e

1

detail X

p

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

mm

1.1

0.9

OUTLINE

VERSION

SOT143B

1

A

max

0.1

b

c

D

b

0.48

0.38

1

p

0.88

0.15

0.78

0.09

IEC JEDEC EIAJ

E

3.0

1.4

2.8

1.2

REFERENCES

e

1.9

1998 Sep 23 11

e

1.7

H

L

E

1

2.5

2.1

0.45

0.15

p

0.55

0.45

EUROPEAN

PROJECTION

ywvQ

0.1 0.10.2

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFG92A/X

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Sep 23 12

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFG92A/X

NOTES

1998 Sep 23 13

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFG92A/X

NOTES

1998 Sep 23 14

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFG92A/X

NOTES

1998 Sep 23 15

Philips Semiconductors – a worldwide company

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Philippines: Philips Semiconductors Philippines Inc.,

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Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

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For all other countries apply to: Philips Semiconductors,
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© Philips Electronics N.V. 1998 SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

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Printed in The Netherlands 125104/00/04/pp16 Date of release: 1998 Sep 23 Document order number: 9397 75004344