Philips BF997 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BF997
N-channel dual-gate MOS-FET
Product specification
File under Discrete Semiconductors, SC07
April 1991
Philips Semiconductors Product specification
N-channel dual-gate MOS-FET BF997
FEATURES
• Protected against excessive input voltage surges by
integrated back-to-back diodes between gates
and source
• Integrated drain resistance to suppress oscillation in the
frequency range greater than 1 GHz.
APPLICATIONS
• UHF and VHF applications such as:
– UHF/VHF television tuners
– Professional communication equipment
• Especially intended for use in pre-amplifiers in CATV
tuners with a large tuning range up to 500 MHz.
PINNING
PIN SYMBOL DESCRIPTION
1 s, b source
2 d drain
3g
4g
gate 2
2
gate 1
1
DESCRIPTION
Depletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.
handbook, halfpage
Top view
Marking code: MKp.
43
21
MAM039
g
2
g
1
d
s,b
Fig.1 Simplified outline (SOT143) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
DS
I
D
P
tot
T
j
Y
fs
C
ig1-s
C
rs
F noise figure f = 200 MHz; G
drain-source voltage − 20 V
drain current − 30 mA
total power dissipation up to T
=60°C − 200 mW
amb
junction temperature − 150 °C
transfer admittance f = 1 kHz; I
= 10 mA; VDS=15V; V
D
input capacitance at gate 1 f = 1 MHz; ID= 10 mA; VDS= 15 V; V
feedback capacitance f = 1 MHz; ID= 10 mA; VDS= 15 V; V
= 2 mS; BS=B
S
ID= 10 mA; VDS=15V; V
G2-S
Sopt
=4V
=4V 18 − mS
G2-S
= 4 V 2.5 − pF
G2-S
=4V 25 − fF
G2-S
;
1 − dB
April 1991 2
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