Philips BF992 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D071
BF992
Silicon N-channel dual gate
MOS-FET
Product specification
Supersedes data of 1996 Jul 30
1999 Aug 11
Philips Semiconductors Product specification
Silicon N-channel dual gate MOS-FET BF992
APPLICATIONS
• VHF applicationssuch as VHF television tuners and FM
tuners with 12 V supply voltage. The device is also
suitable for use in professional communications
equipment.
DESCRIPTION
Depletion type field-effect transistor in a plastic
micro-miniature SOT143B package with source and
substrate interconnected.
The transistor is protected against excessive input voltage
surges by integrated back-to-back diodes between gates
and source.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING
PIN SYMBOL DESCRIPTION
1 s, b source
2 d drain
3g
4g
handbook, halfpage
43
Top view
Marking code: M92.
gate 2
2
gate 1
1
21
MAM039
g
2
g
1
Fig.1 Simplified outline (SOT143B) andsymbol.
d
s,b
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
DS
I
D
P
tot
forward transfer admittance f = 1 kHz; ID= 15 mA; VDS=10V;
Y
fs
C
ig1-s
C
rs
F noise figure G
T
j
drain-source voltage (DC) − 20 V
drain current (DC) − 40 mA
total power dissipation T
=60°C − 200 mW
amb
25 − mS
V
=4V
G2-S
input capacitance at gate 1 f = 1 MHz; ID= 15 mA; VDS=10V;
V
=4V
G2-S
reverse transfer capacitance f = 1 MHz; ID= 15 mA; VDS=10V;
V
=4V
G2-S
= 2 mS; ID= 15 mA; VDS=10V;
S
V
= 4 V; f = 200 MHz
G2-S
4 − pF
30 − fF
1.2 − dB
operating junction temperature − 150 °C
1999 Aug 11 2
Philips Semiconductors Product specification
Silicon N-channel dual gate MOS-FET BF992
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
I
D
I
G1
I
G2
P
tot
T
stg
T
j
Note
1. Device mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm.
drain-source voltage − 20 V
drain current − 40 mA
gate 1 current −±10 mA
gate 2 current −±10 mA
total power dissipation T
≤ 60 °C; see Fig.2; note 1 − 200 mW
amb
storage temperature −65 +150 °C
operating junction temperature − 150 °C
handbook, halfpage
200
P
tot max
(mW)
100
0
0 200100
o
T
( C)
amb
Fig.2 Power derating curves.
MBL033
1999 Aug 11 3
Philips Semiconductors Product specification
Silicon N-channel dual gate MOS-FET BF992
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Device mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm.
STATIC CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
±V
(BR)G1-SS
±V
(BR)G2-SS
−V
(P)G1-S
−V
(P)G2-S
±I
G1-SS
±I
G2-SS
thermal resistance from junction to ambient in free air note 1 460 K/W
gate 1-source breakdown voltage V
gate 2-source breakdown voltage V
gate 1-source cut-off voltage V
gate 2-source cut-off voltage V
gate 1 cut-off current V
gate 2 cut-off current V
G2-S=VDS
G1-S=VDS
G2-S
G1-S
G2-S=VDS
G1-S=VDS
= 0; I
= 0; I
= ±10 mA 8 20 V
G1-SS
= ±10 mA 8 20 V
G2-SS
=4V; VDS= 10 V; ID=20µA 0.2 1.3 V
= 0; VDS= 10 V; ID=20µA 0.2 1.1 V
= 0; V
= 0; V
= ±7V − 25 nA
G1-S
= ±7V − 25 nA
G2-S
DYNAMIC CHARACTERISTICS
Common source; T
=25°C; VDS=10V; V
amb
= 4 V; ID= 15 mA; unless otherwise specified.
G2-S
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
forward transfer admittance 20 25 − mS
y
fs
C
ig1-s
C
ig2-s
C
os
C
rs
F noise figure f = 200 MHz; G
input capacitance at gate 1 f = 1 MHz − 4 − pF
input capacitance at gate 2 f = 1 MHz − 1.7 − pF
output capacitance f = 1 MHz − 2 − pF
reverse transfer capacitance f = 1 MHz − 30 40 fF
=2mS − 1.2 − dB
S
1999 Aug 11 4
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