Philips bf990a DATASHEETS

DISCRETE SEMICONDUCTORS

DATA SH EET

BF990A

N-channel dual-gate MOS-FET

Product specification
File under Discrete Semiconductors, SC07

April 1991

Philips Semiconductors Product specification

N-channel dual-gate MOS-FET BF990A

FEATURES

• Protected against excessive input voltage surges by
integrated back-to-back diodes between gates
and source.

APPLICATIONS

• RF applications such as:
– Television tuners with 12 V supply voltage
– Professional communication equipment.

PINNING

PIN SYMBOL DESCRIPTION

1 s, b source
2 d drain
3g
4g

2
1

gate 2
gate 1

QUICK REFERENCE DATA

DESCRIPTION

Depletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.

handbook, halfpage

Top view

Marking code: M87.

43

21

MAM039

g

2

g

1

d

s,b

Fig.1 Simplified outline (SOT143) and symbol.

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

DS

I

D

P

tot

T

j

Y

fs

C

ig1-s

C

rs

F noise figure f = 800 MHz; G

drain-source voltage − 18 V
drain current − 30 mA
total power dissipation up to T

=60°C − 200 mW

amb

junction temperature − 150 °C
transfer admittance f = 1 kHz; I

= 10 mA; VDS=10V; V

D

input capacitance at gate 1 f = 1 MHz; ID= 10 mA; VDS= 10 V; V
feedback capacitance f = 1 MHz; ID= 10 mA; VDS= 10 V; V

= 5 mS; BS=B

S

ID= 10 mA; VDS=10V; V

G2-S

Sopt

=4V

=4V 19 − mS

G2-S

= 4 V 2.6 3 pF

G2-S

=4V 25 − fF

G2-S

;

23dB

April 1991 2