Philips BF990A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BF990A
N-channel dual-gate MOS-FET
Product specification
File under Discrete Semiconductors, SC07
April 1991
Philips Semiconductors Product specification
N-channel dual-gate MOS-FET BF990A
FEATURES
• Protected against excessive input voltage surges by
integrated back-to-back diodes between gates
and source.
APPLICATIONS
• RF applications such as:
– Television tuners with 12 V supply voltage
– Professional communication equipment.
PINNING
PIN SYMBOL DESCRIPTION
1 s, b source
2 d drain
3g
4g
2
1
gate 2
gate 1
QUICK REFERENCE DATA
DESCRIPTION
Depletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.
handbook, halfpage
Top view
Marking code: M87.
43
21
MAM039
g
2
g
1
d
s,b
Fig.1 Simplified outline (SOT143) and symbol.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
DS
I
D
P
tot
T
j
Y
fs
C
ig1-s
C
rs
F noise figure f = 800 MHz; G
drain-source voltage − 18 V
drain current − 30 mA
total power dissipation up to T
=60°C − 200 mW
amb
junction temperature − 150 °C
transfer admittance f = 1 kHz; I
= 10 mA; VDS=10V; V
D
input capacitance at gate 1 f = 1 MHz; ID= 10 mA; VDS= 10 V; V
feedback capacitance f = 1 MHz; ID= 10 mA; VDS= 10 V; V
= 5 mS; BS=B
S
ID= 10 mA; VDS=10V; V
G2-S
Sopt
=4V
=4V 19 − mS
G2-S
= 4 V 2.6 3 pF
G2-S
=4V 25 − fF
G2-S
;
23dB
April 1991 2
Philips Semiconductors Product specification
N-channel dual-gate MOS-FET BF990A
LIMITING VALUES
In according with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
I
D
I
G1-S
I
G2-S
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
drain-source voltage − 18 V
drain current (DC) − 30 mA
gate 1-source current −±10 mA
gate 2-source current −±10 mA
total power dissipation up to T
=60°C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
thermal resistance from junction to ambient in free air; note 1 460 K/W
Note to the Limiting values and the Thermal characteristics
1. Device mounted on a ceramic substrate of 8 × 10 × 0.7 mm.
200
handbook, halfpage
P
tot
(mW)
100
0
0 200
100
T
amb
MGE792
(°C)
Fig.2 Power derating curve.
April 1991 3
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