Philips bf964 DATASHEETS
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages especially VHF TV-tuners.
Features
D
Integrated gate protection diodes
D
High cross modulation performance
D
Low noise figure
D
High AGC-range
D
Low feedback capacitance
D
Low input capacitance
BF964S
2
94 9307
3
4
96 12647
1
G
2
G
1
BF964S Marking: BF964S
Plastic case (TO 50)
12623
1=Drain, 2=Source, 3=Gate 1, 4=Gate 2
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Type Symbol Value Unit
Drain - source voltage V
Drain current I
Gate 1/Gate 2 - source peak current ±I
Total power dissipation T
Channel temperature T
Storage temperature range T
≤ 60 °C P
amb
DS
D
G1/G2SM
tot
Ch
stg
D
20 V
30 mA
10 mA
200 mW
150
–55 to +150
S
°
C
°
C
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm
plated with 35mm Cu
Document Number 85003
Rev. 3, 20-Jan-99
3
R
thChA
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450 K/W
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BF964S
DS G1S G2S
Vishay Telefunken
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Type Symbol Min Typ Max Unit
Drain - source
breakdown voltage
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
Drain current VDS = 15 V, V
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
ID = 10 mA, –V
±I
= 10 mA, V
G1S
±I
= 10 mA, V
G2S
±V
= 5 V, V
G1S
±V
= 5 V, V
G2S
VDS = 15 V, V
VDS = 15 V, V
= –V
G1S
G2S
G1S
= VDS = 0 ±I
G2S
= VDS = 0 ±I
G1S
= 0, V
G1S
= 4 V V
G2S
= VDS = 0 ±V
= VDS = 0 ±V
= 4 V BF964S I
G2S
BF964SA I
BF964SB I
= 4 V, ID = 20 mA –V
G2S
= 0, ID = 20 mA –V
G1S
(BR)DS
(BR)G1SS
(BR)G2SS
G1SS
G2SS
DSS
DSS
DSS
G1S(OFF)
G2S(OFF)
20 V
8 14 V
8 14 V
4 18 mA
4 10.5 mA
9.5 18 mA
50 nA
50 nA
2.5 V
2.0 V
Electrical AC Characteristics
VDS = 15 V, ID = 10 mA, V
Parameter Test Conditions Symbol Min Typ Max Unit
Forward transadmittance y
Gate 1 input capacitance C
Gate 2 input capacitance V
Feedback capacitance C
Output capacitance C
Power gain GS = 2 mS, GL = 0.5 mS, f = 200 MHz G
AGC range V
Noise figure GS = 2 mS, GL = 0.5 mS, f = 200 MHz F 1.0 dB
= 4 V, f = 1 MHz , T
G2S
= 0, V
G1S
G2S
G2S
= 4 to –2 V, f = 200 MHz
= 25_C, unless otherwise specified
amb
= 4 V C
15 18.5 mS
21s
2.5 3.0 pF
1.2 pF
25 35 fF
1.0 1.3 pF
25 dB
50 dB
D
issg1
issg2
rss
oss
ps
G
ps
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Document Number 85003
Rev. 3, 20-Jan-99
BF964S
Vishay Telefunken
Typical Characteristics (T
300
250
200
150
100
50
tot
P – Total Power Dissipation ( mW )
0
0 20 40 60 80 100 120 140 160
T
– Ambient Temperature ( °C )96 12159
amb
Figure 1. Total Power Dissipation vs.
Ambient Temperature
36
32
28
24
20
16
12
8
D
I – Drain Current ( mA )
4
0
0246810121416
Figure 2. Drain Current vs. Drain Source Voltage
V
=2V
G1S
V
=4V
G2S
VDS – Drain Source Voltage ( V )12762
1.5V
1V
= 25_C unless otherwise specified)
amb
80
70
VDS=15V
60
50
40
30
20
D
I – Drain Current ( mA )
10
0
–1012345
V
– Gate 2 Source Voltage ( V )12764
G2S
Figure 4. Drain Current vs. Gate 2 Source Voltage
4.0
VDS=15V
3.5
V
=4V
G2S
f=1MHz
0
0 3 6 9 12 15 18 21 24 27 30
ID – Drain Current ( mA )12765
0.5V
0V
–0.5V
–1V
3.0
2.5
2.0
1.5
1.0
0.5
issg1
C – Gate 1 Input Capacitance ( pF )
Figure 5. Gate 1 Input Capacitance vs. Drain Current
V
=4V
G1S
3V
2V
1V
0V
–1V
100
90
VDS=15V
80
70
60
50
40
30
D
20
I – Drain Current ( mA )
10
0
–1012345
V
– Gate 1 Source Voltage ( V )12763
G1S
V
=6V
G2S
5V
4V
3V
2V
1V
0V
–1V
Figure 3. Drain Current vs. Gate 1 Source Voltage
Document Number 85003
Rev. 3, 20-Jan-99
2.00
1.75
1.50
1.25
1.00
0.75
0.50
oss
C – Output Capacitance ( pF )
0.25
0
0 2 4 6 8 101214161820
VDS – Drain Source Voltage ( V )12766
V
=4V
G2S
I
=10mA
D
f=1MHz
Figure 6. Output Capacitance vs. Drain Source Voltage
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