How it Works
Philips
Loading...
bf909wr
Datasheet
11 pgs140.81 Kb0

Philips bf909wr Datasheet

Download
Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BF909WR
N-channel dual-gate MOS-FET
Product specification File under Discrete Semiconductors, SC07
Philips Semiconductors
1995 Apr 25
Page 2
Philips Semiconductors Product specification
N-channel dual-gate MOS-FET BF909WR
FEATURES
• Specially designed for use at 5 V supply voltage
• Short channel transistor with high forward transfer
admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.
APPLICATIONS
• VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.
DESCRIPTION
Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.
CAUTION
The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
PINNING
PIN SYMBOL DESCRIPTION
1 s, b source 2 d drain 3g 4g
handbook, halfpage
34
21
Top view
Marking code: ME.
gate 2
2
gate 1
1
g g
MAM192
d
2
1
Fig.1 Simplified outline (SOT343R) and symbol.
s,b
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
DS
I
D
P
tot
T
j
y
forward transfer admittance 36 43 50 mS
fs
C
ig1-s
C
rs
drain-source voltage −−7V drain current −−40 mA total power dissipation −−280 mW operating junction temperature −−150 °C
input capacitance at gate 1 − 3.6 4.3 pF reverse transfer capacitance f = 1 MHz − 30 50 fF
F noise figure f = 800 MHz − 2 2.8 dB
Page 3
Philips Semiconductors Product specification
N-channel dual-gate MOS-FET BF909WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
I
D
I
G1
I
G2
P
tot
T
stg
T
j
Note
1. Device mounted on a printed-circuit board.
drain-source voltage − 7V drain current − 40 mA gate 1 current −±10 mA gate 2 current −±10 mA total power dissipation up to T
=50°C; see Fig.2;
amb
− 280 mW
note 1 storage temperature range −65 +150 °C operating junction temperature − +150 °C
300
handbook, halfpage
P
tot
(mW)
200
100
0
0 50 100 200
150
T ( C)
amb
Fig.2 Power derating curve.
MLD150
o
Page 4
Philips Semiconductors Product specification
N-channel dual-gate MOS-FET BF909WR
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Notes
1. Device mounted on a printed-circuit board.
2. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
Tj=25°C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)G1-SS
V
(BR)G2-SS
V
(F)S-G1
V
(F)S-G2
V
G1-S(th)
V
G2-S(th)
I
DSX
I
G1-SS
I
G2-SS
thermal resistance from junction to ambient note 1 350 K/W thermal resistance from junction to soldering point Ts=91°C; note 2 210 K/W
gate 1-source breakdown voltage V gate 2-source breakdown voltage V forward source-gate 1 voltage V forward source-gate 2 voltage V gate 1-source threshold voltage V gate 2-source threshold voltage V drain-source current V
G2-S=VDS G1-S=VDS G2-S=VDS G1-S=VDS G2-S G1-S=VDS G2-S
= 0; I = 0; I = 0; I = 0; I
=10mA 6 15 V
G1-S
=10mA 6 15 V
G2-S
= 10 mA 0.5 1.5 V
S-G1
= 10 mA 0.5 1.5 V
S-G2
=4V; VDS=5V; ID=20µA 0.3 1 V
=5V; ID=20µA 0.3 1.2 V
=4V; VDS=5V; RG1= 120 kΩ;
12 20 mA
note 1 gate 1 cut-off current V gate 2 cut-off current V
G2-S=VDS G1-S=VDS
= 0; V = 0; V
=5V − 50 nA
G1-S
=5V − 50 nA
G2-S
Note
1. R
connects gate 1 to VGG=5V.
G1
DYNAMIC CHARACTERISTICS
Common source; T
=25°C; VDS=5V;V
amb
= 4 V; ID= 15 mA; unless otherwise specified.
G2-S
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
forward transfer admittance pulsed; Tj=25°C 364350mS
y
fs
C
ig1-s
C
ig2-s
C
os
C
rs
F noise figure f = 800 MHz; G
input capacitance at gate 1 f = 1 MHz − 3.6 4.3 pF input capacitance at gate 2 f = 1 MHz − 2.3 3 pF drain-source capacitance f = 1 MHz − 2.3 3 pF reverse transfer capacitance f = 1 MHz − 30 50 fF
S=GSopt
; BS=B
− 2 2.8 dB
Sopt
Page 5
Philips Semiconductors Product specification
N-channel dual-gate MOS-FET BF909WR
110
handbook, halfpage
V
unw
(dBµV)
100
90
80
0
10 50
VDS= 5V; VGG= 5 V; fw= 50 MHz. f
= 60 MHz; T
unw
=25°C; RG1= 120kΩ.
amb
20 30 40
gain reduction (dB)
MLB936
Fig.3 Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical values; see Fig.17.
30
handbook, halfpage
V = 4 V
I
D
G2 S
3 V 2.5 V
(mA)
20
10
0
0
0.4 2.0
VDS=5V. Tj=25°C.
0.8 1.2 1.6
Fig.4 Transfer characteristics; typical values.
MLB937
2 V
1.5 V
1 V
V (V)
G1 S
30
handbook, halfpage
I
D
(mA)
20
10
0
0
VDS=5V. V
=4V.
G2-S
Tj=25°C.
210
V = 1.4 V
G1 S
1.3 V
1.2 V
1.1 V
1.0 V
0.9 V
468
Fig.5 Output characteristics; typical values.
MLB938
V (V)
DS
200
handbook, halfpage
I
G1
(µA)
150
100
50
0
VDS=5V. Tj=25°C.
0123
V = 4 V
G2 S
3.5 V
3 V
2.5 V
2 V
Fig.6 Gate 1 current as a function of gate 1
voltage; typical values.
MLB939
V (V)
G1 S
Page 6
Philips Semiconductors Product specification
N-channel dual-gate MOS-FET BF909WR
60
handbook, halfpage
y
fs
(mS)
40
20
0
0
VDS=5V. Tj=25°C.
10 20 30
Fig.7 Forward transfer admittance as a
function of drain current; typical values.
MLB940
V = 4 V
G2 S
3.5 V 3 V
2.5 V
2 V
I (mA)
D
25
handbook, halfpage
I
D
(mA)
20
15
10
5
0
0204060
VDS=5V. V
=4V.
G2-S
Tj=25°C.
MLB941
I (µA)
G1
Fig.8 Drain current as a function of gate 1 current;
typical values.
16
handbook, halfpage
I
D
(mA)
12
8
4
0
0246
VDS= 5 V; V RG1= 120 kΩ (connected to VGG); Tj=25°C.
G2-S
=4V.
Fig.9 Drain current as a function of gate 1
supply voltage (= VGG); typical values; see Fig.17.
MLB942
V (V)
GG
30
handbook, halfpage
I
D
(mA)
20
10
0
0
VDS= 5 V; V RG1 connected to VGG; Tj=25°C.
G2-S
R = 47 kΩ
G1
24 8
=4V.
68 kΩ
V = V (V)
GG DS
Fig.10 Drain current as a function of gate 1
(= VGG) and drain supply voltage; typical values; see Fig.17.
MLB943
82 kΩ
100 kΩ 120 kΩ
150 kΩ 180 kΩ 220 kΩ
6
Page 7
Philips Semiconductors Product specification
N-channel dual-gate MOS-FET BF909WR
V = 5 V
GG
4.5 V 4 V
3.5 V 3 V
V (V)
G2 S
MLB944
20
handbook, halfpage
I
D
(mA)
16
12
8
4
0
0246
VDS= 5 V; Tj=25°C. RG1= 120 kΩ (connected to VGG).
Fig.11 Drain current as a function of gate 2 voltage;
typical values; see Fig.17.
40
handbook, halfpage
I
G1
(µA)
30
20
10
0
0246
VDS= 5 V; Tj=25°C. RG1= 120 kΩ (connected to VGG).
V = 5 V
Fig.12 Gate 1 current as a function of gate 2
voltage; typical values; see Fig.17.
MLB945
GG
4.5 V 4 V
3.5 V 3 V
V (V)
G2 S
2
10
handbook, halfpage
y
is
(mS)
10
1
1
10
10
VDS= 5 V; VG2=4V. ID= 15 mA; T
amb
=25°C.
b
is
g
is
2
10
MLB946
f (MHz)
Fig.13 Input admittance as a function of frequency;
typical values.
f (MHz)
MLB947
3
10
ϕ
rs
(deg)
2
10
10
1
3
10
3
10
y
rs
(µS)
ϕ
2
10
10
3
10
1
10
VDS= 5 V; VG2=4V. ID= 15 mA; T
amb
=25°C.
rs
y
rs
2
10
Fig.14 Reverse transfer admittance and phase as
a function of frequency; typical values.
Page 8
Philips Semiconductors Product specification
N-channel dual-gate MOS-FET BF909WR
2
10
y
fs
(mS)
10
1
10
VDS= 5 V; VG2=4V. ID= 15 mA; T
amb
=25°C.
y
fs
ϕ
fs
2
10
f (MHz)
MLB948
10
(deg)
10
1
3
10
Fig.15 Forward transfer admittance and phase as
a function of frequency; typical values.
f (MHz)
MLB949
3
10
2
ϕ
fs
10
handbook, halfpage
y
os
(mS)
1
1
10
2
10
10
VDS= 5 V; VG2=4V. ID= 15 mA; T
amb
=25°C.
b
os
g
os
2
10
Fig.16 Output admittance as a function of
frequency; typical values.
V
AGC
R1
R
GEN
50 Ω
V
10 kΩ
C2
4.7 nF
R2
50 Ω
I
V
GG
C1
4.7 nF
R
G1
Fig.17 Cross-modulation test set-up.
DUT
R3
10 Ω
C5
2.2 pF
≈
V
DS
C3 12 pF
L1
350 nH
C4
4.7 nF
R 50 Ω
MLD151
L
Page 9
Philips Semiconductors Product specification
N-channel dual-gate MOS-FET BF909WR
Table 1 Scattering parameters: VDS= 5 V; V
s
f
(MHz)
MAGNITUDE
(ratio)
11
ANGLE
(deg)
MAGNITUDE
(ratio)
= 4 V; ID= 15 mA; T
G2-S
s
21
ANGLE
(deg)
=25°C
amb
s
MAGNITUDE
(ratio)
12
ANGLE
(deg)
s
MAGNITUDE
(ratio)
22
ANGLE
(deg)
50 0.985 −6.4 4.064 172.3 0.001 86.9 0.985 −3.2 100 0.978 −12.6 3.997 164.9 0.002 82.7 0.982 −6.4 200 0.957 −25.0 3.886 150.8 0.005 74.3 0.973 −12.6 300 0.931 −36.5 3.682 137.3 0.006 68.9 0.960 −18.6 400 0.899 −47.6 3.484 123.8 0.007 59.6 0.947 −24.2 500 0.868 −57.4 3.260 111.7 0.007 57.9 0.936 −29.6 600 0.848 −66.6 3.053 101.0 0.006 58.5 0.927 −34.8 700 0.816 −74.6 2.829 90.3 0.005 65.5 0.919 −39.8 800 0.792 −82.2 2.652 79.9 0.005 83.3 0.913 −44.6 900 0.772 −89.3 2.470 69.5 0.005 114.9 0.910 −49.5
1000 0.754 −95.6 2.328 59.5 0.006 138.7 0.909 −54.6
Table 2 Noise data: V
f
(MHz)
= 5 V; V
DS
= 4 V; ID= 15 mA; T
G2-S
F
min
(dB)
=25°C
amb
Γ
opt
(ratio) (deg)
r
n
800 2.00 0.603 67.71 0.581
Page 10
Philips Semiconductors Product specification
N-channel dual-gate MOS-FET BF909WR
PACKAGE OUTLINE
1.00
0.1
max
max
0.2
handbook, full pagewidth
0.2
A
M
0.2
M
34
0.4
B
0.2
A
Dimensions in mm.
2.2
2.0
Fig.18 SOT343R.
21
1.4
1.2
2.2
1.8
0.7
0.5
1.35
1.15
B
0.3
0.1
0.25
0.10
MSB367
1995 Apr 25 10
Page 11
Philips Semiconductors Product specification
N-channel dual-gate MOS-FET BF909WR
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1995 Apr 25 11
Loading...
Buy Points How it Works FAQ Contact Us Questions and Suggestions Privacy Policy Cookie Policy Terms of Use