Philips BF909R Technical data

BF909

DISCRETE SEMICONDUCTORS

DATA SHEET

BF909; BF909R

N-channel dual gate MOS-FETs

Product specification	1995 Apr 25
File under Discrete Semiconductors, SC07

Philips Semiconductors

Philips Semiconductors	Product specification
N-channel dual gate MOS-FETs	BF909; BF909R

FEATURES

·Specially designed for use at 5 V supply voltage

·High forward transfer admittance

·Short channel transistor with high forward transfer admittance to input capacitance ratio

·Low noise gain controlled amplifier up to 1 GHz

·Superior cross-modulation performance during AGC.

APPLICATIONS

·VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.

DESCRIPTION

Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The

transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

CAUTION

The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.

PINNING

PIN	SYMBOL	DESCRIPTION
1	s, b	source
2	d	drain
3	g2	gate 2
4	g1	gate 1

handbook, halfpage					d						d
						handbook, halfpage
						3			4
4			3

	g	2		g2
				g1
	g1
1	2		2	1
Top view	MAM124	s,b	Top view	s,b
				MAM125 - 1

BF909 marking code: M28.

BF909R marking code: M29.

Fig.1 Simplified outline (SOT143) and symbol.

Fig.2 Simplified outline (SOT143R) and symbol.

QUICK REFERENCE DATA

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
VDS	drain-source voltage		-	-	7	V
ID	drain current		-	-	40	mA
Ptot	total power dissipation		-	-	200	mW
Tj	operating junction temperature		-	-	150	°C
ïyfsï	forward transfer admittance		36	43	50	mS
Cig1-s	input capacitance at gate 1		-	3.6	4.3	pF
Crs	reverse transfer capacitance	f = 1 MHz	-	35	50	fF
F	noise figure	f = 800 MHz	-	2	2.8	dB

1995 Apr 25

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Philips Semiconductors						Product specification
N-channel dual gate MOS-FETs					BF909; BF909R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL		PARAMETER	CONDITIONS	MIN.		MAX.	UNIT
VDS		drain-source voltage		−		7	V
ID		drain current		−		40	mA
IG1		gate 1 current		−		±10	mA
IG2		gate 2 current		−		±10	mA
Ptot		total power dissipation	see Fig.3
		BF909	up to Tamb = 50 °C; note 1	−		200	mW
		BF909R	up to Tamb = 40 °C; note 1	−		200	mW
Tstg		storage temperature		−65		+150	°C
Tj		operating junction temperature		−		150	°C

Note

1. Device mounted on a printed-circuit board.

250				MLB935
handbook, halfpage
Ptot
(mW)
200
150
100	BF909R	BF909
50
0
0	50	100	150		200
			T		(oC)
			amb

Fig.3 Power derating curves.

1995 Apr 25

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Philips Semiconductors			Product specification
N-channel dual gate MOS-FETs			BF909; BF909R
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-a	thermal resistance from junction to ambient	note 1
	BF909		500	K/W
	BF909R		550	K/W
Rth j-s	thermal resistance from junction to soldering point	note 2
	BF909	Ts = 92 °C	290	K/W
	BF909R	Ts = 78 °C	360	K/W

Notes

1.Device mounted on a printed-circuit board.

2.Ts is the temperature at the soldering point of the source lead.

STATIC CHARACTERISTICS

Tj = 25 °C; unless otherwise specified.

SYMBOL	PARAMETER		CONDITIONS	MIN.	MAX.	UNIT
V(BR)G1-SS	gate 1-source breakdown voltage	VG2-S = VDS = 0; IG1-S = 10 mA		6	15	V
V(BR)G2-SS	gate 2-source breakdown voltage	VG1-S = VDS = 0; IG2-S = 10 mA		6	15	V
V(F)S-G1	forward source-gate 1 voltage	VG2-S = VDS = 0; IS-G1 = 10 mA		0.5	1.5	V
V(F)S-G2	forward source-gate 2 voltage	VG1-S = VDS = 0; IS-G2 = 10 mA		0.5	1.5	V
VG1-S(th)	gate 1-source threshold voltage	VG2-S = 4	V; VDS = 5 V;	0.3	1	V
		ID = 20 mA
VG2-S(th)	gate 2-source threshold voltage	VG1-S = VDS = 5 V; ID = 20 mA		0.3	1.2	V
IDSX	drain-source current	VG2-S = 4	V; VDS = 5 V;	12	20	mA
		RG1 = 120 kW; note 1
IG1-SS	gate 1 cut-off current	VG1-S = 5	V; VG2-S = VDS = 0	-	50	nA
IG2-SS	gate 2 cut-off current	VG2-S = 5	V; VG1-S = VDS = 0	-	50	nA

Note

1. RG1 connects gate 1 to VGG = 5 V; see Fig.18.

DYNAMIC CHARACTERISTICS

Common source; Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
ïyfsï	forward transfer admittance	pulsed; Tj = 25 °C	36	43	50	mS
Cig1-s	input capacitance at gate 1	f = 1 MHz	-	3.6	4.3	pF
Cig2-s	input capacitance at gate 2	f = 1 MHz	-	2.3	3	pF
Cos	drain-source capacitance	f = 1 MHz	-	2.3	3	pF
Crs	reverse transfer capacitance	f = 1 MHz	-	35	50	fF
F	noise figure	f = 800 MHz; GS = GSopt; BS = BSopt	-	2	2.8	dB

1995 Apr 25

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