Philips bf909 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
BF909; BF909R
N-channel dual gate MOS-FETs
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
1995 Apr 25
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF909; BF909R
FEATURES
• Specially designed for use at 5 V supply voltage
• High forward transfer admittance
• Short channel transistor with high forward transfer
admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.
APPLICATIONS
• VHF and UHF applications with 3 to 7 V supply voltage
such as television tuners and professional
communications equipment.
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
handbook, halfpage
43
d
transistor consists of an amplifier MOS-FET with source
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING
PIN SYMBOL DESCRIPTION
1 s, b source
2 d drain
3g
4g
handbook, halfpage
34
gate 2
2
gate 1
1
d
g
2
g
1
21
Top view
BF909 marking code: M28.
MAM124
Fig.1 Simplified outline (SOT143) and symbol.
s,b
12
Top view
BF909R marking code: M29.
MAM125 - 1
Fig.2 Simplified outline (SOT143R) and symbol.
g
2
g
1
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
DS
I
D
P
tot
T
j
y
forward transfer admittance 36 43 50 mS
fs
C
ig1-s
C
rs
drain-source voltage −−7V
drain current −−40 mA
total power dissipation −−200 mW
operating junction temperature −−150 °C
input capacitance at gate 1 − 3.6 4.3 pF
reverse transfer capacitance f = 1 MHz − 35 50 fF
F noise figure f = 800 MHz − 2 2.8 dB
s,b
1995 Apr 25 2
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF909; BF909R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
I
D
I
G1
I
G2
P
tot
T
stg
T
j
Note
1. Device mounted on a printed-circuit board.
drain-source voltage − 7V
drain current − 40 mA
gate 1 current −±10 mA
gate 2 current −±10 mA
total power dissipation see Fig.3
BF909 up to T
BF909R up to T
=50°C; note 1 − 200 mW
amb
=40°C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
operating junction temperature − 150 °C
250
handbook, halfpage
P
tot
(mW)
200
150
100
50
0
0 50 100 200
BF909R BF909
150
T ( C)
Fig.3 Power derating curves.
amb
MLB935
o
1995 Apr 25 3
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF909; BF909R
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Notes
1. Device mounted on a printed-circuit board.
is the temperature at the soldering point of the source lead.
2. T
s
STATIC CHARACTERISTICS
Tj=25°C; unless otherwise specified.
thermal resistance from junction to ambient note 1
BF909 500 K/W
BF909R 550 K/W
thermal resistance from junction to soldering point note 2
BF909 T
BF909R T
=92°C 290 K/W
s
=78°C 360 K/W
s
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)G1-SS
V
(BR)G2-SS
V
(F)S-G1
V
(F)S-G2
V
G1-S(th)
gate 1-source breakdown voltage V
gate 2-source breakdown voltage V
forward source-gate 1 voltage V
forward source-gate 2 voltage V
gate 1-source threshold voltage V
G2-S=VDS
G1-S=VDS
G2-S=VDS
G1-S=VDS
G2-S
= 0; I
G1-S
= 0; I
G2-S
= 0; I
S-G1
= 0; I
S-G2
=4V; VDS=5V;
= 10 mA 6 15 V
= 10 mA 6 15 V
= 10 mA 0.5 1.5 V
= 10 mA 0.5 1.5 V
0.3 1 V
ID=20µA
V
G2-S(th)
I
DSX
gate 2-source threshold voltage V
drain-source current V
G1-S=VDS
G2-S
=5V; ID=20µA 0.3 1.2 V
=4V; VDS=5V;
12 20 mA
RG1= 120 kΩ; note 1
I
G1-SS
I
G2-SS
gate 1 cut-off current V
gate 2 cut-off current V
G1-S
G2-S
=5V; V
=5V; V
G2-S=VDS
G1-S=VDS
=0 − 50 nA
=0 − 50 nA
Note
1. R
connects gate 1 to VGG= 5 V; see Fig.18.
G1
DYNAMIC CHARACTERISTICS
Common source; T
=25°C; VDS= 5 V; V
amb
= 4 V; ID= 15 mA; unless otherwise specified.
G2-S
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
forward transfer admittance pulsed; Tj=25°C 364350mS
y
fs
C
ig1-s
C
ig2-s
C
os
C
rs
F noise figure f = 800 MHz; G
input capacitance at gate 1 f = 1 MHz − 3.6 4.3 pF
input capacitance at gate 2 f = 1 MHz − 2.3 3 pF
drain-source capacitance f = 1 MHz − 2.3 3 pF
reverse transfer capacitance f = 1 MHz − 35 50 fF
S=GSopt
; BS=B
− 2 2.8 dB
Sopt
1995 Apr 25 4
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