Philips bf908wr DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
BF908WR
N-channel dual-gate MOS-FET
Preliminary specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
1995 Apr 25
Philips Semiconductors Preliminary specification
N-channel dual-gate MOS-FET BF908WR
FEATURES
• High forward transfer admittance
• Short channel transistor with high forward transfer
admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
• VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment.
DESCRIPTION
Depletion type field effect transistor in a plastic
microminiature SOT343R package. The transistor is
protected against excessive input voltage surges by
integrated back-to-back diodes between gates and
source.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING
PIN SYMBOL DESCRIPTION
1 s, b source
2 d drain
3g
4g
34
21
Top view
Marking code: MD.
gate 2
2
gate 1
1
MAM198
g
2
g
1
Fig.1 Simplified outline (SOT343R) and symbol.
d
s,b
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
DS
I
D
P
tot
T
j
forward transfer admittance 36 43 50 mS
y
fs
C
ig1-s
C
rs
drain-source voltage −−12 V
drain current −−40 mA
total power dissipation −−300 mW
operating junction temperature −−150 °C
input capacitance at gate 1 2.4 3.1 4 pF
reverse transfer capacitance f = 1 MHz 20 30 45 fF
F noise figure f = 800 MHz − 1.5 2.5 dB
1995 Apr 25 2
Philips Semiconductors Preliminary specification
N-channel dual-gate MOS-FET BF908WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
I
D
I
G1
I
G2
P
tot
T
stg
T
j
Note
1. Device mounted on a printed-circuit board.
drain-source voltage − 12 V
drain current − 40 mA
gate 1 current −±10 mA
gate 2 current −±10 mA
total power dissipation up to T
=45°C; see Fig.2;
amb
− 300 mW
note 1
storage temperature −65 +150 °C
operating junction temperature − +150 °C
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
0 50 100 200
150
T ( C)
amb
Fig.2 Power derating curve.
MLD154
o
1995 Apr 25 3
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