Philips BF583 DATA SHEET
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D067
BF583; BF585; BF587
NPN high-voltage transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1996 Dec 09
Philips Semiconductors Product specification
NPN high-voltage transistors BF583; BF585; BF587
FEATURES
• Low feedback capacitance.
handbook, halfpage
APPLICATIONS
• For use in video output stages of black and white and
colour television receivers.
DESCRIPTION
NPN transistors in a TO-202 plastic package.
2
3
1
PINNING
PIN DESCRIPTION
123
MBH793
1 emitter
2 collector
Fig.1 Simplified outline (TO-202) and symbol.
3 base
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF583 − 300 V
BF585 − 350 V
BF587 − 400 V
V
CEO
collector-emitter voltage open base
BF583 − 250 V
BF585 − 300 V
BF587 − 350 V
I
P
h
C
f
CM
tot
FE
re
T
peak collector current − 100 mA
total power dissipation in free air; T
≤ 25 °C − 1.6 W
amb
DC current gain IC= 25 mA; VCE=20V − 50
feedback capacitance IC=ic= 0; VCE= 30 V; f = 1 MHz − 1.8 pF
transition frequency IC= 10 mA; VCE= 10 V 70 110 MHz
1996 Dec 09 2
Philips Semiconductors Product specification
NPN high-voltage transistors BF583; BF585; BF587
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BF583 − 300 V
BF585 − 350 V
BF587 − 400 V
collector-emitter voltage open base
BF583 − 250 V
BF585 − 300 V
BF587 − 350 V
emitter-base voltage open collector − 5V
collector current (DC) 50 − mA
peak collector current − 100 mA
peak base current − 50 mA
total power dissipation in free air; T
in free air; T
≤ 25 °C − 1.6 W
amb
≤ 25 °C − 5W
mb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
R
th j-a
th j-mb
thermal resistance from junction to ambient 78 K/W
thermal resistance from junction to mounting base 25 K/W
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
V
C
C
f
T
FE
CEsat
c
re
collector cut-off current IE= 0; VCB= 300 V − 20 nA
= 0; VCB= 250 V; Tj= 150 °C − 20 µA
I
E
emitter cut-off current IC= 0; VEB=5V − 100 nA
DC current gain IC= 25 mA; VCE=20V 50 −
= 40 mA; VCE=20V 20 −
I
C
collector-emitter saturation voltage IC= 30 mA; IB=5mA − 600 mV
collector capacitance IE=ie= 0; VCB= 30 V; f = 1 MHz − 2.5 pF
feedback capacitance IC=ic= 0; VCE=30V; f=1MHz − 1.8 pF
transition frequency IC= 10 mA; VCE= 10 V 70 110 MHz
1996 Dec 09 3
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