Philips bd139 DATASHEETS
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L- 000019.2
TO-126 (SOT-32) Plastic Package
BD135, BD137, BD139
BD135, 137, 139 NPN PLASTIC POWER TRANSISTORS
Complementary BD136, 138, 140
Medium Power Linear and Switching Applications
PIN CONFIGURATION
1. EMITTER
2. COLLECTOR
3. BASE
1
2
3
ALL DIMENSIONS IN MM
ABSOLUTE MAXIMUM RATINGSABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGSABSOLUTE MAXIMUM RATINGS
135 137 139
Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Collector current I
Total power dissipation up to T
= 25°C P
C
Junction temperature T
C
tot
j
CBO
CEO
max. 45 60 100 V
max. 45 60 80 V
max. 1.5 A
max. 12.5 W
max. 150 °C
Collector-emitter saturation voltage
= 0.5 A; IB = 0.05 A V
I
C
CEsat
max. 0.5 V
D.C. current gain
= 0.15 A; VCE = 2 V h
I
C
FE
min. 40
max. 250
RATINGS RATINGS
RATINGS (at T
RATINGS RATINGS
=25 C unless otherwise specified)
A
Limiting values 135 137 139
Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
CBO
CEO
EBO
max. 45 60 100 V
max. 45 60 80 V
max. 5.0 V
Continental Device India Limited Data Sheet Page 1 of 3
BD135, BD137, BD139
Collector current I
Base current I
Total power dissipation up to T
= 25°C P
A
C
B
tot
max. 1 .5 A
max. 0 .5 A
max. 1.25 W
Derate above 25°C max 10
Total power dissipation up to TC = 25°C P
tot
max. 12.5 W
Derate above 25°C max 100
Junction temperature T
Storage temperature T
j
stg
max. 150 °C
–65 to +150
THERMAL RESISTANCE
From junction to case R
From junction to ambient R
th j–c
th j–a
10
100
CHARACTERISTICS
T
= 25°C unless otherwise specified
amb
135 137 139
Collector cutoff current
= 0; VCB = 30 V I
I
E
I
= 0; VCB = 30 V; TC = 125°C I
E
CBO
CBO
max. 0 .1 µA
max. 10 µA
Emitter cut-off current
= 0; VEB = 5 V I
I
C
EBO
max. 10 µA
Breakdown voltages
I
= 0.03 A; IB = 0 V
C
= 1 mA; IE = 0 V
I
C
= 1 mA; IC = 0 V
I
E
CEO(sus)
CBO
EBO
* min. 45 60 80 V
min. 45 60 100 V
min. 5.0 V
Saturation voltage
= 0.5 A; IB = 0.05 A V
I
C
* max. 0.5 V
CEsat
Base-emitter on voltage
I
= 0.5A; VCE = 2V V
C
* max. 1.0 V
BE(on)
D.C. current gain
= 0.005 A; VCE = 2 V* hFE* min. 25
I
C
mW/°C
mW/°C
ºC
°C/W
°C/W
I
= 0.15 A; VCE = 2 V** hFE* min. 40
C
max. 250
= 0.5 A; VCE = 2 V* hFE* min. 25
I
C
** h
classification: –6 min. 40
FE
max. 100
–10 min. 63
max. 160
–16 min. 100
max. 250
–25 min. 160
max. 400
* Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2%.
Continental Device India Limited Data Sheet Page 2 of 3
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