Philips BD140-16, BD140-10, BD138-16, BD138-10, BD136-16 Datasheet
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DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D100
BD136; BD138; BD140
PNP power transistors
Product specification
Supersedes data of 1997 Mar 26
1999 Apr 12
Philips Semiconductors Product specification
PNP power transistors BD136; BD138; BD140
FEATURES
• High current (max. 1.5 A)
• Low voltage (max. 80 V).
APPLICATIONS
• General purpose power applications, e.g. driver stages
in hi-fi amplifiers and television circuits.
DESCRIPTION
PNP power transistor in a TO-126; SOT32 plastic
package. NPN complements: BD135, BD137 and BD139.
PINNING
PIN DESCRIPTION
1 emitter
2 collector, connected to metal part of
mounting surface
3 base
handbook, halfpage
3
123
Top view
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
2
1
MAM272
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BD136 −−45 V
BD138 −−60 V
BD140 −−100 V
V
CEO
collector-emitter voltage open base
BD136 −−45 V
BD138 −−60 V
BD140 −−80 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector −−5V
collector current (DC) −−1.5 A
peak collector current −−2A
peak base current −−1A
total power dissipation Tmb≤ 70 °C − 8W
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 12 2
Philips Semiconductors Product specification
PNP power transistors BD136; BD138; BD140
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-mb
Note
1. Refer to TO-126 (SOT32) standard mounting conditions.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
f
T
h
FE1
----------h
FE2
thermal resistance from junction to ambient note 1 100 K/W
thermal resistance from junction to mounting base 10 K/W
collector cut-off current IE= 0; VCB= −30 V −−−100 nA
I
= 0; VCB= −30 V; Tj= 125 °C −−−10 µA
E
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
DC current gain VCE= −2 V; (see Fig.2)
= −5mA 40 −−
I
C
I
=−150 mA 63 − 250
C
I
= −500 mA 25 −−
C
DC current gain I
BD136-10; BD138-10; BD140-10 63 − 160
= −150 mA; VCE= −2V;
C
(see Fig.2)
BD136-16; BD138-16; BD140-16 100 − 250
collector-emitter saturation voltage IC= −500 mA; IB= −50 mA −−−0.5 V
base-emitter voltage IC= −500 mA; VCE= −2V −−−1V
transition frequency IC= −50 mA; VCE= −5V;
− 160 − MHz
f = 100 MHz
DC current gain ratio of the
I
= 150 mA; VCE =2V − 1.3 1.6
C
complementary pairs
1999 Apr 12 3
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