Philips BD132 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D100
BD132
PNP power transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Mar 04
Philips Semiconductors Product specification
PNP power transistor BD132
FEATURES
• High current (max. 3 A)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose power applications.
DESCRIPTION
PNP power transistor in a TO-126; SOT32 plastic
package. NPN complement: BD131.
PINNING
PIN DESCRIPTION
1 emitter
2 collector, connected to metal part of
mounting surface
3 base
handbook, halfpage
3
123
Top view
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
2
1
MAM272
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
I
CM
P
tot
h
FE
f
T
collector-base voltage open emitter −−45 V
collector-emitter voltage open base −−45 V
peak collector current −−6A
total power dissipation Tmb≤ 60 °C − 15 W
DC current gain IC= −0.5 A; VCE= −12 V 40 −
transition frequency IC= −0.25 A; VCE= −5 V; f = 100 MHz 60 − MHz
1997 Mar 04 2
Philips Semiconductors Product specification
PNP power transistor BD132
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−45 V
collector-emitter voltage open base −−45 V
emitter-base voltage open collector −−4V
collector current (DC) −−3A
peak collector current −−6A
peak base current −−0.5 A
total power dissipation Tmb≤ 60 °C − 15 W
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-mb
thermal resistance from junction to ambient note 1 100 K/W
thermal resistance from junction to mounting base 6 K/W
Note
1. Refer to TO-126; SOT32 standard mounting conditions.
1997 Mar 04 3
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