Philips BD131 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D100
BD131
NPN power transistor
Product specification
Supersedes data of 1997 Mar 04
1999 Apr 12
Philips Semiconductors Product specification
NPN power transistor BD131
FEATURES
• High current (max. 3 A)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose power applications.
DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic
package. PNP complement: BD132.
PINNING
PIN DESCRIPTION
1 emitter
2 collector, connected to metal part of
mounting surface
3 base
handbook, halfpage
3
123
Top view
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
2
1
MAM254
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 70 V
collector-emitter voltage open base − 45 V
emitter-base voltage open collector − 6V
collector current (DC) − 3A
peak collector current − 6A
peak base current − 0.5 A
total power dissipation Tmb≤ 60 °C − 15 W
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 12 2
Philips Semiconductors Product specification
NPN power transistor BD131
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-mb
Note
1. Refer to TO-126; SOT32 standard mounting conditions.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
f
T
thermal resistance from junction to ambient note1 100 K/W
thermal resistance from junction to mounting base 6 K/W
collector cut-off current IE= 0; VCB=50V − 50 nA
I
= 0; VCB=50V; Tj= 150 °C − 10 µA
E
emitter cut-off current IC= 0; VEB=5V − 50 nA
DC current gain IC= 0.5 A; VCE= 12 V; (see Fig.2) 40 −
= 2 A; VCE= 1 V; (see Fig.2) 20 −
I
C
collector-emitter saturation voltage IC= 0.5 A; IB=50mA − 300 mV
I
= 2 A; IB= 200 mA − 700 mV
C
base-emitter saturation voltage IC= 0.5 A; IB=50mA − 1.2 V
I
= 2 A; IB= 200 mA − 1.5 V
C
transition frequency IC= 0.25 A; VCE= 5 V; f = 100 MHz;
T
=25°C
amb
60 − MHz
1999 Apr 12 3
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