Philips bcy78 79 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D125
BCY78; BCY79
PNP switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jun 18
Philips Semiconductors Product specification
PNP switching transistors BCY78; BCY79
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector, connected to case
• Switching and amplification.
DESCRIPTION
PNP switching transistor in a TO-18 metal package.
NPN complements: BCY58 and BCY59.
handbook, halfpage
3
1
2
2
MAM263
3
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BCY78 −−32 V
BCY79 −−45 V
V
CEO
collector-emitter voltage open base
BCY78 −−32 V
BCY79 −−45 V
I
C
P
tot
h
FE
collector current (DC) −−100 mA
total power dissipation T
≤ 45 °C − 340 mW
amb
T
≤ 45 °C − 1W
case
DC current gain IC= −2 mA; VCE= −5V
BCY78/VII; BCY79/VII 120 220
BCY78/VIII; BCY79/VIII 180 310
BCY78/IX; BCY79/IX 250 460
BCY78/X 380 630
f
T
t
off
transition frequency IC= −10 mA; VCE= −5 V 100 − MHz
turn-off time I
= −100 mA; I
Con
= −10 mA; I
Bon
=10mA − 400 ns
Boff
1997 Jun 18 2
Philips Semiconductors Product specification
PNP switching transistors BCY78; BCY79
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BCY78 −−32 V
BCY79 −−45 V
collector-emitter voltage open base
BCY78 −−32 V
BCY79 −−45 V
emitter-base voltage open collector −5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−200 mA
total power dissipation T
≤ 45 °C − 340 mW
amb
T
≤ 45 °C − 1W
case
storage temperature −65 +150 °C
junction temperature − 200 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-c
thermal resistance from junction to ambient in free air 450 K/W
thermal resistance from junction to case 150 K/W
1997 Jun 18 3
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