Philips bcy70 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D361
BCY70; BCY71
PNP general purpose transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 11
Philips Semiconductors Product specification
PNP general purpose transistors BCY70; BCY71
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 45 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector, connected to case
• General purpose industrial applications.
DESCRIPTION
PNP transistor in a TO-18 metal package.
handbook, halfpage
1
2
2
3
MAM263
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BCY70 −−50 V
BCY71 −−45 V
V
CEO
collector-emitter voltage open base
BCY70 −−40 V
BCY71 −−45 V
I
P
h
f
CM
tot
FE
T
peak collector current −−200 mA
total power dissipation T
≤ 25 °C − 350 mW
amb
DC current gain IC= −10 mA; VCE= −1 V 100 −
transition frequency IC= −10 mA; VCE= −20 V; f = 100 MHz 250 − MHz
3
1
1997 Jul 11 2
Philips Semiconductors Product specification
PNP general purpose transistors BCY70; BCY71
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BCY70 −−50 V
BCY71 −−45 V
collector-emitter voltage open base
BCY70 −−40 V
BCY71 −−45 V
emitter-base voltage open collector −−5V
collector current (DC) −−200 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C − 350 mW
amb
storage temperature −65 +150 °C
junction temperature − 200 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-c
thermal resistance from junction to ambient in free air 500 K/W
thermal resistance from junction to case 150 K/W
1997 Jul 11 3
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