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DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D088
BCX71 series
PNP general purpose transistors
Product specification
Supersedes data of 1997 Apr 18
1999 Apr 20
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Philips Semiconductors Product specification
PNP general purpose transistors BCX71 series
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V)
• Low noise.
APPLICATIONS
• Low level, low noise, low frequency applications in
hybrid circuits
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a plastic SOT23 package.
NPN complements: BCX70 series.
MARKING
TYPE
NUMBER
MARKING
(1)
CODE
TYPE
NUMBER
MARKING
CODE
BCX71G BG∗ BCX71J BJ∗
BCX71H BH∗ BCX71K BK∗
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
3
1
2
MAM256
Note
1. ∗ = p : Made in Hong Kong.
Fig.1 Simplified outline (SOT23) and symbol.
∗ = t : Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−45 V
collector-emitter voltage open base −−45 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 20 2
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Philips Semiconductors Product specification
PNP general purpose transistors BCX71 series
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB= −45 V −−−20 nA
I
= 0; VCB= −45 V; T
E
= 150 °C −−−20 µA
amb
emitter cut-off current IC= 0; VEB= −4V −−−20 nA
DC current gain IC= −10 µA; VCE= −5V
BCX71G −−−
BCX71H 30 −−
BCX71J 40 −−
BCX71K 100 −−
DC current gain I
= −2 mA; VCE= −5V
C
BCX71G 120 − 220
BCX71H 180 − 310
BCX71J 250 − 460
BCX71K 380 − 630
DC current gain I
= −50 mA; VCE= −1 V; note 1
C
BCX71G 60 −−
BCX71H 80 −−
BCX71J 100 −−
BCX71K 110 −−
collector-emitter saturation
voltage
base-emitter saturation
voltage
IC= −10 mA; IB= −0.25 mA −60 −−250 mV
I
= −50 mA; IB= −1.25 mA; note 1 −120 −−550 mV
C
IC= −10 mA; IB= −0.25 mA −600 −−850 mV
I
= −50 mA; IB= −1.25 mA; note 1 −680 −−1050 mV
C
base-emitter voltage IC= −2 mA; VCE= −5V −600 −650 −750 mV
I
= −10 µA; VCE= −5V −−550 − mV
C
I
= −50 mA; VCE= −1 V; note 1 −−720 − mV
C
collector capacitance IE=Ie= 0; VCB= −10 V; f = 1 MHz − 4.5 − pF
emitter capacitance IC=Ic= 0; VEB= −0.5 V; f = 1 MHz − 11 − pF
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 100 −−MHz
= −200 µA; VCE= −5 V; RS=2kΩ;
C
− 26dB
f = 1 kHz; B = 200 Hz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 20 3