Philips BCX70K, BCX70J, BCX70G Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D088
BCX70 series
NPN general purpose transistors
Product specification
Supersedes data of 1997 Mar 14
1999 Apr 15
Philips Semiconductors Product specification
NPN general purpose transistors BCX70 series
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BCX71 series.
MARKING
TYPE NUMBER MARKING CODE
BCX70G AG∗
BCX70H AH∗
BCX70J AJ∗
BCX70K AK∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
3
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 45 V
collector-emitter voltage open base − 45 V
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 15 2
Philips Semiconductors Product specification
NPN general purpose transistors BCX70 series
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
F noise figure I
collector cut-off current IE= 0; VCB=45V −−20 nA
I
= 0; VCB= 45 V; T
E
= 150 °C −−20 µA
amb
emitter cut-off current IC= 0; VEB=4V −−20 nA
DC current gain IC=10µA; VCE=5V
BCX70G −−−
BCX70H 40 −−
BCX70J 30 −−
BCX70K 100 −−
DC current gain I
= 2 mA; VCE=5V
C
BCX70G 120 − 220
BCX70H 180 − 310
BCX70J 250 − 460
BCX70K 380 − 630
DC current gain I
= 50 mA; VCE=1V
C
BCX70G 50 −−
BCX70H 70 −−
BCX70J 90 −−
BCX70K 100 −−
collector-emitter saturation
voltage
IC= 10 mA; IB= 0.25 mA 50 − 350 mV
I
= 50 mA; IB= 1.25 mA 100 − 550 mV
C
base-emitter saturation voltage IC= 10 mA; IB= 0.25 mA 600 − 850 mV
= 50 mA; IB= 1.25 mA 700 − 1050 mV
I
C
base-emitter voltage IC=10µA; VCE=5V − 520 − mV
I
= 2 mA; VCE= 5 V 550 650 750 mV
C
I
= 50 mA; VCE=1V − 780 − mV
C
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 1.7 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 11 − pF
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz;
100 250 − MHz
note 1
= 200 µA; VCE=5V; RS=2kΩ;
C
− 26dB
f = 1 kHz; B = 200 Hz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 15 3
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