Philips BB911 User Manual
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DISCRETE SEMICONDUCTORS
DATA SH EET
M3D051
BB911/A
VHF variable capacitance diode
Product specification
Supersedes data of December 1993
File under Discrete Semiconductors, SC01
1996 May 03
Philips Semiconductors Product specification
VHF variable capacitance diode BB911/A
FEATURES
• High linearity
• Matched to 2.5%
• Hermetically sealed leaded glass
SOD68 (DO-34) package
• C28: 2.7 pF; ratio: 25.
APPLICATIONS
• Electronic tuning in VHF television
tuners, band A up to 160 MHz
• VCO.
DESCRIPTION
The BB911/A is a variable
capacitance diode, fabricated in
planar technology, and encapsulated
in the hermetically sealed leaded
glass SOD68 (DO-34) package.
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
handbook, halfpage
Cathode side indicated by a red band on a black body.
Additional white band.
k
a
MAM234
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current −
storage temperature
operating junction temperature
−
−55
−55
30 V
20 mA
+150 °C
+100 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
C
d 0.5V()
--------------------- C
d28V()
C
∆
d
----------
C
d
reverse current VR= 30 V; see Fig.3 −−
= 30 V; Tj=85°C; see Fig.3 −−200 nA
V
R
10
diode series resistance f = 100 MHz; note 1 −−2Ω
diode capacitance VR= 0.5 V; f = 1 MHz; see Figs 2 and 4
V
= 28 V; f = 1 MHz; see Figs 2 and 4 2.4 − 2.9 pF
R
60
−
75 pF
capacitance ratio f = 1 MHz 23.3 − 28.4
capacitance matching VR= 0.5 to 28 V −−2.5 %
nA
Note
is the value at which Cd= 40 pF.
1. V
R
1996 May 03 2
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