Philips BB150 DATA SHEET
DISCRETE SEMICONDUCTORS
DATA SH EET
lfpage
M3D049
BB150
VHF variable capacitance diode
Product specification
Supersedes data of December 1994
File under Discrete Semiconductors, SC01
1996 May 03
Philips Semiconductors Product specification
VHF variable capacitance diode BB150
FEATURES
• Excellent linearity
• Very small plastic SMD package
• C28: 2.5 pF; ratio: 16
• Low series resistance.
APPLICATIONS
• Electronic tuning in VHF television
tuners, band B up to 460 MHz
• VCO.
DESCRIPTION
The BB150 is a double implanted
variable capacitance diode,
fabricated in planar technology, and
encapsulated in the SOD323 very
small SMD package.
The matched type, BB133 has the
same specification.
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
handbook, 4 columns
Marking code: P0.
Cathode side indicated by a yellow bar.
ka
MAM130
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current −
storage temperature
operating junction temperature
−
−55
−55
30 V
20 mA
+150 °C
+125 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
C
d 0.5V()
--------------------- C
d28V()
reverse current VR= 30 V; see Fig.3 −−
V
= 30 V; Tj=85°C; see Fig.3 −−
R
10
200
diode series resistance f = 100 MHz; note 1 −−0.9 Ω
diode capacitance VR= 0.5 V; f = 1 MHz; see Figs 2 and 4
= 28 V; f = 1 MHz; see Figs 2 and 4 2.2 − 2.6 pF
V
R
38
−
46 pF
capacitance ratio f = 1 MHz 14 − 21
nA
nA
Note
1. V
is the value at which Cd= 30 pF.
R
1996 May 03 2
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