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DISCRETE SEMICONDUCTORS
DATA SH EET
lfpage
M3D049
BB149
UHF variable capacitance diode
Product specification
Supersedes data of December 1994
File under Discrete Semiconductors, SC01
1996 May 03
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Philips Semiconductors Product specification
UHF variable capacitance diode BB149
FEATURES
• Excellent linearity
• Excellent matching to 1% DMA
• Very small plastic SMD package
• C28: 2.1 pF; ratio 9
• Low series resistance.
APPLICATIONS
handbook, 4 columns
ka
MAM130
• Electronic tuning in UHF television
tuners
Marking code: P9.
Cathode side indicated by a white bar.
• VCO.
Fig.1 Simplified outline (SOD323) and symbol.
DESCRIPTION
The BB149 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOD323 very small plastic SMD
package.
The excellent matching performance
is achieved by gliding matching and a
direct matching assembly procedure.
The unmatched type, BB159 has the
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current −
storage temperature
operating junction temperature
−
−55
−55
30 V
20 mA
+150 °C
+125 °C
same specification.
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
C
d1V()
-------------------C
d28V()
reverse current VR= 30 V; see Fig.3 −−
V
= 30 V; Tj=85°C; see Fig.3 −−
R
10
200
diode series resistance f = 470 MHz; note 1 −−0.75 Ω
diode capacitance VR= 1 V; f = 1 MHz; see Figs 2 and 4
= 28 V; f = 1 MHz; see Figs 2 and 4 1.9 − 2.25 pF
V
R
18
−
19.5 pF
capacitance ratio f = 1 MHz 8.2 − 10
nA
nA
C
d19V()
-------------------C
d28V()
C
∆
d
---------C
d
capacitance ratio f = 1 MHz 1.2 −−
capacitance matching V
= 0.5 to 28 V; in a sequence of 4 diodes (gliding) −−1%
R
V
= 0.5 to 28 V; in a sequence of 15 diodes (gliding) −−2%
R
Note
1. V
is the value at which Cd= 9 pF.
R
1996 May 03 2