DISCRETE SEMICONDUCTORS
DATA SH EET
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M3D049
BB149
UHF variable capacitance diode
Product specification
Supersedes data of December 1994
File under Discrete Semiconductors, SC01
1996 May 03
Philips Semiconductors Product specification
UHF variable capacitance diode BB149
FEATURES
• Excellent linearity
• Excellent matching to 1% DMA
• Very small plastic SMD package
• C28: 2.1 pF; ratio 9
• Low series resistance.
APPLICATIONS
handbook, 4 columns
ka
MAM130
• Electronic tuning in UHF television
tuners
Marking code: P9.
Cathode side indicated by a white bar.
• VCO.
Fig.1 Simplified outline (SOD323) and symbol.
DESCRIPTION
The BB149 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOD323 very small plastic SMD
package.
The excellent matching performance
is achieved by gliding matching and a
direct matching assembly procedure.
The unmatched type, BB159 has the
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current −
storage temperature
operating junction temperature
−
−55
−55
30 V
20 mA
+150 °C
+125 °C
same specification.
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
C
d1V()
-------------------C
d28V()
reverse current VR= 30 V; see Fig.3 −−
V
= 30 V; Tj=85°C; see Fig.3 −−
R
10
200
diode series resistance f = 470 MHz; note 1 −−0.75 Ω
diode capacitance VR= 1 V; f = 1 MHz; see Figs 2 and 4
= 28 V; f = 1 MHz; see Figs 2 and 4 1.9 − 2.25 pF
V
R
18
−
19.5 pF
capacitance ratio f = 1 MHz 8.2 − 10
nA
nA
C
d19V()
-------------------C
d28V()
C
∆
d
---------C
d
capacitance ratio f = 1 MHz 1.2 −−
capacitance matching V
= 0.5 to 28 V; in a sequence of 4 diodes (gliding) −−1%
R
V
= 0.5 to 28 V; in a sequence of 15 diodes (gliding) −−2%
R
Note
1. V
is the value at which Cd= 9 pF.
R
1996 May 03 2