Philips BB133 DATA SHEET

DISCRETE SEMICONDUCTORS
DATA SH EET
lfpage
M3D049
BB133
VHF variable capacitance diode
Product specification Supersedes data of November 1993 File under Discrete Semiconductors, SC01
1996 May 03
Philips Semiconductors Product specification
VHF variable capacitance diode BB133
FEATURES
Excellent linearity
Excellent matching to 0.7% DMA
Very small plastic SMD package
C28: 2.5 pF; ratio: 16
Low series resistance.
APPLICATIONS
handbook, 4 columns
ka
MAM130
Electronic tuning in VHF television tuners, band B up to 460 MHz
Marking code: P3. Cathode side indicated by a yellow bar.
VCO.
Fig.1 Simplified outline (SOD323) and symbol.
DESCRIPTION
The BB133 is a variable capacitance diode, fabricated in planar
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
technology, and encapsulated in the SOD323 very small plastic SMD package.
The excellent matching performance is achieved by gliding matching and a direct matching assembly procedure. The unmatched type, BB150 has the
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage continuous forward current
storage temperature operating junction temperature
55
55
30 V 20 mA +150 °C +125 °C
same specification.
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
C
d 0.5V()
--------------------- ­C
d28V()
reverse current VR= 30 V; see Fig.3 −−
V
= 30 V; Tj=85°C; see Fig.3 −−
R
10
200 diode series resistance f = 100 MHz; note 1 −−0.9 diode capacitance VR= 0.5 V; f = 1 MHz; see Figs 2 and 4
= 28 V; f = 1 MHz; see Figs 2 and 4 2.2 2.6 pF
V
R
38
46 pF
capacitance ratio f = 1 MHz 14 21
nA nA
C
---------­C
d
d
capacitance matching V
= 0.5 to 28 V; in a sequence of 4 diodes
R
(gliding)
= 0.5 to 28 V; in a sequence of 15 diodes
V
R
(gliding)
Note
1. V
is the value at which Cd= 30 pF.
R
1996 May 03 2
−−0.7 %
−−2%
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