DISCRETE SEMICONDUCTORS
DATA SH EET
lfpage
M3D049
BB133
VHF variable capacitance diode
Product specification
Supersedes data of November 1993
File under Discrete Semiconductors, SC01
1996 May 03
Philips Semiconductors Product specification
VHF variable capacitance diode BB133
FEATURES
• Excellent linearity
• Excellent matching to 0.7% DMA
• Very small plastic SMD package
• C28: 2.5 pF; ratio: 16
• Low series resistance.
APPLICATIONS
handbook, 4 columns
ka
MAM130
• Electronic tuning in VHF television
tuners, band B up to 460 MHz
Marking code: P3.
Cathode side indicated by a yellow bar.
• VCO.
Fig.1 Simplified outline (SOD323) and symbol.
DESCRIPTION
The BB133 is a variable capacitance
diode, fabricated in planar
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
technology, and encapsulated in the
SOD323 very small plastic SMD
package.
The excellent matching performance
is achieved by gliding matching and a
direct matching assembly procedure.
The unmatched type, BB150 has the
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current −
storage temperature
operating junction temperature
−
−55
−55
30 V
20 mA
+150 °C
+125 °C
same specification.
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
C
d 0.5V()
--------------------- C
d28V()
reverse current VR= 30 V; see Fig.3 −−
V
= 30 V; Tj=85°C; see Fig.3 −−
R
10
200
diode series resistance f = 100 MHz; note 1 −−0.9 Ω
diode capacitance VR= 0.5 V; f = 1 MHz; see Figs 2 and 4
= 28 V; f = 1 MHz; see Figs 2 and 4 2.2 − 2.6 pF
V
R
38
−
46 pF
capacitance ratio f = 1 MHz 14 − 21
nA
nA
C
∆
---------C
d
d
capacitance matching V
= 0.5 to 28 V; in a sequence of 4 diodes
R
(gliding)
= 0.5 to 28 V; in a sequence of 15 diodes
V
R
(gliding)
Note
1. V
is the value at which Cd= 30 pF.
R
1996 May 03 2
−−0.7 %
−−2%
Philips Semiconductors Product specification
VHF variable capacitance diode BB133
GRAPHICAL DATA
50
handbook, full pagewidth
C
d
(pF)
40
30
20
10
0
−1
f =1 MHz; Tj=25°C.
10110
VR (V)
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
MBE875
2
10
3
10
handbook, halfpage
I
R
(nA)
2
10
10
50
o
T ( C)
j
Fig.3 Reverse current as a function of junction
temperature; maximum values.
MLC816
V (V)
R
MLC815
2
3
10
handbook, halfpage
TC
d
−1
(K
)
4
10
5
10
1000
Tj = 0 to 85 °C.
1
10
11010
Fig.4 Temperature coefficient of diode
capacitance as a function of
reverse voltage; typical values.
1996 May 03 3
Philips Semiconductors Product specification
VHF variable capacitance diode BB133
PACKAGE OUTLINE
handbook, full pagewidth
1.00
0.25
max
0.10
0.40
1.35
0.25
1.15
Dimensions in mm.
The (yellow) marking bar indicates the cathode.
1.8
1.6
2.7
2.3
Fig.5 SOD323.
0.55
0.40
0.05
max
A
0.2 A
M
MBC672 - 1
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 03 4
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