Philips BB132 DATA SHEET

DISCRETE SEMICONDUCTORS
DATA SH EET
lfpage
M3D049
BB132
VHF variable capacitance diode
Product specification Supersedes data of November 1993 File under Discrete Semiconductors, SC01
1996 May 03
Philips Semiconductors Product specification
VHF variable capacitance diode BB132
FEATURES
High linearity
Excellent matching to 1% DMA
Very small plastic SMD package
C28: 2.5 pF; ratio: 26.
APPLICATIONS
Electronic tuning in VHF television tuners, band A up to 160 MHz
VCO.
DESCRIPTION
The BB132 is a variable capacitance diode fabricated in planar technology, and encapsulated in the SOD323 very small plastic SMD package.
The excellent matching performance is achieved by gliding matching and a direct matching assembly procedure.
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
handbook, 4 columns
Marking code: P2. Cathode side indicated by a red bar.
ka
MAM130
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage continuous forward current
storage temperature operating junction temperature
55
55
30 V 20 mA +150 °C +125 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
C
d 0.5V()
--------------------- ­C
d28V()
C
d
----------
C
d
reverse current VR= 30 V; see Fig.3 −−
V
= 30 V; Tj=85°C; see Fig.3 −−
R
10
200 diode series resistance f = 100 MHz; note 1 −−2Ω diode capacitance VR= 0.5 V; f = 1 MHz; see Figs 2 and 4
= 28 V; f = 1 MHz; see Figs 2 and 4 2.3 2.75 pF
V
R
60
75 pF
capacitance ratio f = 1 MHz 24 30
capacitance matching V
= 0.5 to 28 V; in a sequence of 4 diodes
R
−−1%
(gliding)
= 0.5 to 28 V; in a sequence of 15 diodes
V
R
−−2%
nA nA
(gliding)
Note
1. V
is the value at which Cd= 30 pF.
R
1996 May 03 2
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