DISCRETE SEMICONDUCTORS
DATA SH EET
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M3D049
BB132
VHF variable capacitance diode
Product specification
Supersedes data of November 1993
File under Discrete Semiconductors, SC01
1996 May 03
Philips Semiconductors Product specification
VHF variable capacitance diode BB132
FEATURES
• High linearity
• Excellent matching to 1% DMA
• Very small plastic SMD package
• C28: 2.5 pF; ratio: 26.
APPLICATIONS
• Electronic tuning in VHF television
tuners, band A up to 160 MHz
• VCO.
DESCRIPTION
The BB132 is a variable capacitance
diode fabricated in planar technology,
and encapsulated in the SOD323
very small plastic SMD package.
The excellent matching performance
is achieved by gliding matching and a
direct matching assembly procedure.
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
handbook, 4 columns
Marking code: P2.
Cathode side indicated by a red bar.
ka
MAM130
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current −
storage temperature
operating junction temperature
−
−55
−55
30 V
20 mA
+150 °C
+125 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
C
d 0.5V()
--------------------- C
d28V()
C
∆
d
----------
C
d
reverse current VR= 30 V; see Fig.3 −−
V
= 30 V; Tj=85°C; see Fig.3 −−
R
10
200
diode series resistance f = 100 MHz; note 1 −−2Ω
diode capacitance VR= 0.5 V; f = 1 MHz; see Figs 2 and 4
= 28 V; f = 1 MHz; see Figs 2 and 4 2.3 − 2.75 pF
V
R
60
−
75 pF
capacitance ratio f = 1 MHz 24 − 30
capacitance matching V
= 0.5 to 28 V; in a sequence of 4 diodes
R
−−1%
(gliding)
= 0.5 to 28 V; in a sequence of 15 diodes
V
R
−−2%
nA
nA
(gliding)
Note
1. V
is the value at which Cd= 30 pF.
R
1996 May 03 2