Philips BAS221A Datasheet
DATA SH EET
Product specification
Supersedes data of 1999 Apr 26
1999 May 07
DISCRETE SEMICONDUCTORS
BAS221
General purpose diode
ook, halfpage
M3D154
1999 May 07 2
Philips Semiconductors Product specification
General purpose diode BAS221
FEATURES
• Small ceramic SMD package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
max. 200 V
• Repetitive peak reverse voltage:
max. 250 V
• Repetitive peak forward current:
max. 1 A.
APPLICATIONS
• General purpose switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS221 is a general purpose diode fabricated in planar technology, and
encapsulated in the ceramic SOD110 package.
Fig.1 Simplified outline (SOD110) and symbol.
handbook, 4 columns
MAM139
ka
cathode mark
top viewside viewbottom view
ak
Marking code: JS.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage − 250 V
V
R
continuous reverse voltage − 200 V
I
F
continuous forward current note 1; see Fig.2 − 300 mA
I
FRM
repetitive peak forward current tp< 0.5 ms; δ≤0.25 − 1A
I
FSM
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 20 A
t = 100 µs − 7A
t = 10 ms − 2A
P
tot
total power dissipation T
amb
=25°C; note 1 − 400 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
1999 May 07 3
Philips Semiconductors Product specification
General purpose diode BAS221
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
ELECTRICAL CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point 200 K/W
R
th j-a
thermal resistance from junction to ambient note 1 315 K/W
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage see Fig.3
I
F
= 100 mA 1 V
I
F
= 200 mA 1.25 V
I
F
= 300 mA 1.4 V
I
R
reverse current see Fig.5
V
R
= 200 V 100 nA
V
R
= 200 V; Tj= 150 °C 100 µA
C
d
diode capacitance f = 1 MHz; VR= 0; see Fig.6 2 pF
t
rr
reverse recovery time when switched from IF= 30 mA to
IR= 30 mA; RL= 100 Ω; measured
at IR= 3 mA; see Fig.7
50 ns
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