Philips BAS221 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D154
BAS221
General purpose diode
Product specification
Supersedes data of 1999 Apr 26
1999 May 07
Philips Semiconductors Product specification
General purpose diode BAS221
FEATURES
• Small ceramic SMD package
• Switching speed: max. 50 ns
DESCRIPTION
The BAS221 is a general purpose diode fabricated in planar technology, and
encapsulated in the ceramic SOD110 package.
• General application
• Continuous reverse voltage:
max. 200 V
• Repetitive peak reverse voltage:
handbook, 4 columns
ak
cathode mark
ka
max. 250 V
• Repetitive peak forward current:
max. 1 A.
top viewside viewbottom view
MAM139
APPLICATIONS
• General purpose switching in e.g.
surface mounted circuits.
Marking code: JS.
Fig.1 Simplified outline (SOD110) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
R
I
F
I
FRM
I
FSM
repetitive peak reverse voltage − 250 V
continuous reverse voltage − 200 V
continuous forward current note 1; see Fig.2 − 300 mA
repetitive peak forward current tp< 0.5 ms; δ≤0.25 − 1A
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 20 A
t = 100 µs − 7A
t = 10 ms − 2A
P
tot
T
stg
T
j
total power dissipation T
=25°C; note 1 − 400 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 07 2
Philips Semiconductors Product specification
General purpose diode BAS221
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
C
d
t
rr
thermal resistance from junction to tie-point 200 K/W
thermal resistance from junction to ambient note 1 315 K/W
forward voltage see Fig.3
I
= 100 mA 1 V
F
= 200 mA 1.25 V
I
F
I
= 300 mA 1.4 V
F
reverse current see Fig.5
V
= 200 V 100 nA
R
V
= 200 V; Tj= 150 °C 100 µA
R
diode capacitance f = 1 MHz; VR= 0; see Fig.6 2 pF
reverse recovery time when switched from IF= 30 mA to
50 ns
IR= 30 mA; RL= 100 Ω; measured
at IR= 3 mA; see Fig.7
1999 May 07 3
Loading...