Philips BAS216 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D154
BAS216
High-speed switching diode
Product specification
Supersedes data of 1996 Apr 03
1999 Apr 22
Philips Semiconductors Product specification
High-speed switching diode BAS216
FEATURES
• Small ceramic SMD package
• High switching speed: max. 4 ns
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
handbook, 4 columns
ak
Marking code: A6.
Fig.1 Simplified outline (SOD110) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
DESCRIPTION
The BAS216 is a high-speed
switching diode fabricated in planar
technology, and encapsulated in the
small rectangular ceramic SMD
SOD110 package.
cathode mark
ka
top viewside viewbottom view
MAM139
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F
I
FRM
I
FSM
RRM
R
repetitive peak reverse voltage − 85 V
continuous reverse voltage − 75 V
continuous forward current note 1 − 250 mA
repetitive peak forward current − 500 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A
P
tot
T
stg
T
j
total power dissipation T
=25°C; see Fig.2; note 1 − 400 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1999 Apr 22 2
Philips Semiconductors Product specification
High-speed switching diode BAS216
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
I
R
C
d
t
rr
V
fr
forward voltage see Fig.3
I
=1mA − 715 mV
F
I
=10mA − 855 mV
F
=50mA − 1V
I
F
I
= 150 mA − 1.25 V
F
reverse current see Fig.5
=25V − 30 nA
V
R
V
=75V − 1 µA
R
V
=25V; Tj= 150 °C − 30 µA
R
=75V; Tj= 150 °C − 50 µA
V
R
diode capacitance f = 1 MHz; VR= 0; see Fig.6 − 1.5 pF
reverse recovery time when switched from IF= 10 mA to
− 4ns
IR= 10 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7
forward recovery voltage when switched from IF= 10 mA;
− 1.75 V
tr= 20 ns; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 200 K/W
thermal resistance from junction to ambient note 1 315 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
1999 Apr 22 3
Philips Semiconductors Product specification
High-speed switching diode BAS216
GRAPHICAL DATA
amb
MSA570
o
500
P
tot
(mW)
250
0
0 100 200
Device mounted on an FR4 printed-circuit board.
T ( C)
Fig.2 Maximum permissibletotal power dissipation
as a function of ambient temperature.
300
handbook, halfpage
I
F
(mA)
200
100
0
02
(1) Tj= 150 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
(1) (3)(2)
1
Fig.3 Forward current as a function of
forward voltage.
MBG382
VF (V)
2
10
handbook, full pagewidth
I
FSM
(A)
10
1
−1
10
1
Based on square wave currents.
Tj=25°C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
MBG704
10
2
10
3
10
tp (µs)
4
10
1999 Apr 22 4
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