Philips BAS20, BAS21 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BAS19; BAS20; BAS21
General purpose diodes
Product specification
Supersedes data of 1996 Sep 10
1999 May 26
Philips Semiconductors Product specification
General purpose diodes BAS19; BAS20; BAS21
FEATURES
• Small plastic SMD package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
max. 100 V; 150 V; 200 V
• Repetitive peak reverse voltage:
max. 120 V; 200 V; 250 V
• Repetitive peak forward current:
max. 625 mA.
APPLICATIONS
• General purpose switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS19, BAS20, BAS21 are
general purpose diodes fabricated in
planar technology, and encapsulated
in small SOT23 plastic SMD
packages.
MARKING
TYPE NUMBER
MARKING
CODE
BAS19 JP∗
BAS20 JR∗
BAS21 JS∗
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
handbook, halfpage
21
3
Fig.1 Simplified outline (SOT23) and symbol.
(1)
PINNING
PIN DESCRIPTION
1 anode
2 not connected
3 cathode
2
n.c.
3
MAM185
1
1999 May 26 2
Philips Semiconductors Product specification
General purpose diodes BAS19; BAS20; BAS21
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F
I
FRM
I
FSM
P
T
T
RRM
R
tot
stg
j
repetitive peak reverse voltage
BAS19 − 120 V
BAS20 − 200 V
BAS21 − 250 V
continuous reverse voltage
BAS19 − 100 V
BAS20 − 150 V
BAS21 − 200 V
continuous forward current see Fig.2; note 1 − 200 mA
repetitive peak forward current − 625 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 9A
t = 100 µs − 3A
t = 10 ms − 1.7 A
total power dissipation T
=25°C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 26 3
Philips Semiconductors Product specification
General purpose diodes BAS19; BAS20; BAS21
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
C
d
t
rr
forward voltage see Fig.3
I
= 100 mA 1 V
F
I
= 200 mA 1.25 V
F
reverse current see Fig.5
BAS19 V
BAS20 V
BAS21 V
= 100 V 100 nA
R
V
= 100 V; Tj= 150 °C 100 µA
R
= 150 V 100 nA
R
V
= 150 V; Tj= 150 °C 100 µA
R
= 200 V 100 nA
R
= 200 V; Tj= 150 °C 100 µA
V
R
diode capacitance f = 1 MHz; VR= 0; see Fig.6 5 pF
reverse recovery time when switched from IF= 30 mA to
50 ns
IR= 30 mA; RL= 100 Ω; measured at
IR= 3 mA; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 330 K/W
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 26 4
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