Philips BAS19, BAS20, BAS21 Technical data

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D088

BAS19; BAS20; BAS21

General purpose diodes

Product specification
Supersedes data of 1999 May 26

2003 Mar 20

Philips Semiconductors Product specification

General purpose diodes BAS19; BAS20; BAS21

FEATURES

• Small plastic SMD package

• Switching speed: max. 50 ns

• General application

• Continuous reverse voltage: max. 100 V; 150 V; 200 V

• Repetitive peak reverse voltage: max. 120 V; 200 V;

250 V

• Repetitive peak forward current: max. 625 mA.

APPLICATIONS

• General purpose switching in e.g. surface mounted
circuits.

DESCRIPTION

The BAS19, BAS20 and BAS21 are general purpose
diodes fabricated in planar technology, and encapsulated
in a small SOT23 plastic SMD package.

MARKING

TYPE NUMBER MARKING CODE

(1)

BAS19 JP∗
BAS20 JR∗
BAS21 JS∗

PINNING

PIN DESCRIPTION

1 anode
2 not connected
3 cathode

handbook, halfpage

21

2

n.c.

3

Fig.1 Simplified outline (SOT23) and symbol.

1

3

MAM185

Note

1. ∗ = p: Made in Hong Kong.

∗ = t: Made in Malaysia.
∗ = W: Made in China.

2003 Mar 20 2

Philips Semiconductors Product specification

General purpose diodes BAS19; BAS20; BAS21

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

V

I

F

I

FRM

I

FSM

P
T
T

RRM

R

tot
stg
j

repetitive peak reverse voltage

BAS19 − 120 V
BAS20 − 200 V
BAS21 − 250 V

continuous reverse voltage

BAS19 − 100 V
BAS20 − 150 V

BAS21 − 200 V
continuous forward current see Fig.2; note 1 − 200 mA
repetitive peak forward current − 625 mA
non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.4

t=1µs − 9A
t = 100 µs − 3A
t = 10 ms − 1.7 A

total power dissipation T

=25°C; note 1 − 250 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C

Note

1. Device mounted on an FR4 printed-circuit board.

2003 Mar 20 3

Philips Semiconductors Product specification

General purpose diodes BAS19; BAS20; BAS21

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

F

I

R

C

d

t

rr

forward voltage see Fig.3

I

= 100 mA 1 V

F

I

= 200 mA 1.25 V

F

reverse current see Fig.5

BAS19 V

BAS20 V

BAS21 V

= 100 V 100 nA

R

= 100 V; Tj= 150 °C 100 µA

V

R

= 150 V 100 nA

R

V

= 150 V; Tj= 150 °C 100 µA

R

= 200 V 100 nA

R

V

= 200 V; Tj= 150 °C 100 µA

R

diode capacitance f = 1 MHz; VR= 0; see Fig.6 5 pF
reverse recovery time when switched from IF= 30 mA to

50 ns
IR= 30 mA; RL= 100 Ω; measured at
IR= 3 mA; see Fig.8

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point 330 K/W
thermal resistance from junction to ambient note 1 500 K/W

Note

1. Device mounted on an FR4 printed-circuit board.

2003 Mar 20 4

Philips Semiconductors Product specification

General purpose diodes BAS19; BAS20; BAS21

GRAPHICAL DATA

amb

MBG442

(oC)

300

handbook, halfpage

I

F

(mA)

200

100

0

0 100 200

Device mounted on an FR4 printed-circuit board.

T

Fig.2 Maximum permissible continuous forward

current as a function of ambient
temperature.

600

handbook, halfpage

I

F

(mA)

400

200

0

02

(1) Tj= 150°C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.

(1) (3)(2)

1

MBG384

VF (V)

Fig.3 Forward current as a function of forward

voltage.

2

10

handbook, full pagewidth

I

FSM

(A)

10

1

−1

10

1

Based on square wave currents.
Tj=25°C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

MBG703

10

2

10

3

10

tp (µs)

4

10

2003 Mar 20 5

Philips Semiconductors Product specification

General purpose diodes BAS19; BAS20; BAS21

2

10

handbook, halfpage

I

R

(µA)

10

1

1

10

2

10

0

(1) VR=V
(2) VR=V

(1) (2)

; maximum values.

Rmax

; typical values.

Rmax

100

Tj (

MBG381

o

C)

Fig.5 Reverse current as a function of junction

temperature.

200

1.0

handbook, halfpage

C

d

(pF)

0.8

0.6

0.4

0.2
04862

f = 1 MHz; Tj=25°C.

MBG447

VR (V)

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

amb

MBG445

(oC)

300

handbook, halfpage

V

R

(V)

200

100

0

0 100 200

(1) BAS21.
(2) BAS20.
(3) BAS19.

(1)

(2)

(3)

T

Fig.7 Maximum permissible continuous reverse

voltage as a function of the ambient
temperature.

2003 Mar 20 6

Philips Semiconductors Product specification

General purpose diodes BAS19; BAS20; BAS21

handbook, full pagewidth

R = 50SΩ

V = V I x R

RF S

(1) IR= 3 mA.

I

F

D.U.T.

SAMPLING

OSCILLOSCOPE

R = 50iΩ

MGA881

t

r

10%

V

R

90%

t

p

input signal

Fig.8 Reverse recovery voltage test circuit and waveforms.

t

I

F

t

rr

t

(1)

output signal

2003 Mar 20 7

Philips Semiconductors Product specification

General purpose diodes BAS19; BAS20; BAS21

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT23

D

3

A

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

0.1

b

cD

p

0.48

0.15

3.0

0.38

0.09

IEC JEDEC EIAJ

2.8

1.4

1.2

e

E

1.9

REFERENCES

0.95

e

1

UNIT

A

max.

1.1

mm

0.9

OUTLINE

VERSION

SOT23 TO-236AB

2003 Mar 20 8

H

2.5

2.1

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28
99-09-13

Philips Semiconductors Product specification

General purpose diodes BAS19; BAS20; BAS21

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For datasheets describingmultipletype numbers,the highest-level productstatus determines thedata sheetstatus.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting valuesdefinition  Limitingvalues givenare in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat anyother conditionsabovethose givenin the
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythat suchapplications willbe
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably beexpected toresult inpersonal injury.Philips
Semiconductorscustomers usingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance.When theproduct is infull production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductorsassumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Mar 20 9

Philips Semiconductors Product specification

General purpose diodes BAS19; BAS20; BAS21

NOTES

2003 Mar 20 10

Philips Semiconductors Product specification

General purpose diodes BAS19; BAS20; BAS21

NOTES

2003 Mar 20 11

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document doesnot formpart of any quotation or contract, isbelieved tobe accurate and reliable and may bechanged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Printed in The Netherlands 613514/04/pp12 Date of release: 2003 Mar 20 Document order number: 9397 75010961

SCA75