Philips BAS19, BAS20, BAS21 Technical data
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BAS19; BAS20; BAS21
General purpose diodes
Product specification
Supersedes data of 1999 May 26
2003 Mar 20
Philips Semiconductors Product specification
General purpose diodes BAS19; BAS20; BAS21
FEATURES
• Small plastic SMD package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage: max. 100 V; 150 V; 200 V
• Repetitive peak reverse voltage: max. 120 V; 200 V;
250 V
• Repetitive peak forward current: max. 625 mA.
APPLICATIONS
• General purpose switching in e.g. surface mounted
circuits.
DESCRIPTION
The BAS19, BAS20 and BAS21 are general purpose
diodes fabricated in planar technology, and encapsulated
in a small SOT23 plastic SMD package.
MARKING
TYPE NUMBER MARKING CODE
(1)
BAS19 JP∗
BAS20 JR∗
BAS21 JS∗
PINNING
PIN DESCRIPTION
1 anode
2 not connected
3 cathode
handbook, halfpage
21
2
n.c.
3
Fig.1 Simplified outline (SOT23) and symbol.
1
3
MAM185
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
2003 Mar 20 2
Philips Semiconductors Product specification
General purpose diodes BAS19; BAS20; BAS21
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F
I
FRM
I
FSM
P
T
T
RRM
R
tot
stg
j
repetitive peak reverse voltage
BAS19 − 120 V
BAS20 − 200 V
BAS21 − 250 V
continuous reverse voltage
BAS19 − 100 V
BAS20 − 150 V
BAS21 − 200 V
continuous forward current see Fig.2; note 1 − 200 mA
repetitive peak forward current − 625 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 9A
t = 100 µs − 3A
t = 10 ms − 1.7 A
total power dissipation T
=25°C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20 3
Philips Semiconductors Product specification
General purpose diodes BAS19; BAS20; BAS21
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
C
d
t
rr
forward voltage see Fig.3
I
= 100 mA 1 V
F
I
= 200 mA 1.25 V
F
reverse current see Fig.5
BAS19 V
BAS20 V
BAS21 V
= 100 V 100 nA
R
= 100 V; Tj= 150 °C 100 µA
V
R
= 150 V 100 nA
R
V
= 150 V; Tj= 150 °C 100 µA
R
= 200 V 100 nA
R
V
= 200 V; Tj= 150 °C 100 µA
R
diode capacitance f = 1 MHz; VR= 0; see Fig.6 5 pF
reverse recovery time when switched from IF= 30 mA to
50 ns
IR= 30 mA; RL= 100 Ω; measured at
IR= 3 mA; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 330 K/W
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20 4
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