Philips BAS116 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BAS116
Low-leakage diode
Product specification
Supersedes data of 1996 Mar 13
1999 May 26
Philips Semiconductors Product specification
Low-leakage diode BAS116
FEATURES
• Plastic SMD package
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 µs
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
APPLICATION
• Low leakage current applications in
surface mounted circuits.
DESCRIPTION
Epitaxial medium-speed switching
diode with a low leakage current in a
small SOT23 plastic SMD package.
PINNING
PIN DESCRIPTION
1 anode
2 not connected
3 cathode
handbook, 4 columns
Marking code: JVp =made in Hong Kong; JVt = made in Malaysia.
21
3
Top view
Fig.1 Simplified outline (SOT23) and symbol.
2
n.c.
1
3
MAM106
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F
I
FRM
I
FSM
RRM
R
repetitive peak reverse voltage − 85 V
continuous reverse voltage − 75 V
continuous forward current see Fig.2; note 1 − 215 mA
repetitive peak forward current − 500 mA
non-repetitive peak forward current square wave; Tj=25°C prior to surge;
see Fig.4
t
=1µs − 4A
p
t
=1ms − 1A
p
t
=1s − 0.5 A
p
P
tot
T
stg
T
j
total power dissipation T
storage temperature −65 +150 °C
junction temperature − 150 °C
=25°C; note 1 − 250 mW
amb
Note
1. Device mounted on a FR4 printed-circuit board.
1999 May 26 2
Philips Semiconductors Product specification
Low-leakage diode BAS116
ELECTRICAL CHARACTERISTICS
T
= 25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
I
R
C
d
t
rr
forward voltage see Fig.3
I
=1mA − 0.9 V
F
I
=10mA − 1V
F
=50mA − 1.1 V
I
F
I
= 150 mA − 1.25 V
F
reverse current see Fig.5
= 75 V 0.003 5 nA
V
R
V
= 75 V; Tj= 150 °C 3 80 nA
R
diode capacitance f = 1 MHz; VR= 0; see Fig.6 2 − pF
reverse recovery time when switched from IF= 10 mA to
0.8 3 µs
IR= 10 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 330 K/W
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Device mounted on a FR4 printed-circuit board.
1999 May 26 3
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