Philips BAS11 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D122
BAS11; BAS12
Controlled avalanche rectifiers
Product specification
Supersedes data of April 1996
1996 Sep 26
Philips Semiconductors Product specification
Controlled avalanche rectifiers BAS11; BAS12
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
DESCRIPTION
Rectifier diodes in cavity free
cylindrical SOD91 glass packages,
incorporating Implotec
(1)
technology.
(1) Implotec is a trademark of Philips.
These packages are hermetically
sealed and fatigue free as coefficients
of expansion of all used parts are
matched.
• Available in ammo-pack.
k
Marking code BAS11: S11.
Marking code BAS12: S12.
a
MAM196
Fig.1 Simplified outline (SOD91) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BAS11 − 300 V
BAS12 − 400 V
V
RWM
working reverse voltage
BAS11 − 300 V
BAS12 − 400 V
V
R
continuous reverse voltage
BAS11 − 300 V
BAS12 − 400 V
I
F(AV)
average forward current averaged over any 20 ms period;
− 350 mA
Ttp=75°C; lead length = 10 mm;
see Figs 2 and 4
averaged over any 20 ms period;
T
=30°C; PCB mounting
amb
− 300 mA
(see Fig.8); see Figs 3 and 4
I
FSM
P
RRM
T
stg
T
j
non-repetitive peak forward current t = 10 ms half sinewave;
repetitive peak reverse power
dissipation
Tj=T
VR=V
t=10µs square wave; f = 50 Hz;
T
amb
prior to surge;
j max
RRMmax
=25°C
storage temperature −65 +150 °C
junction temperature −65 +150 °C
− 4A
− 75 W
1996 Sep 26 2 Not recommended for new designs
Philips Semiconductors Product specification
Controlled avalanche rectifiers BAS11; BAS12
ELECTRICAL CHARACTERISTICS
=25°C; unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
(BR)R
I
R
t
rr
C
d
forward voltage IF= 300 mA; Tj=T
I
= 300 mA; see Fig.5 −−1.1 V
F
reverse avalanche
IR= 0.1 mA
breakdown voltage
BAS11 330 −−V
BAS12 440 −−V
reverse current VR=V
V
R=VRRMmax
; see Fig.6 −−250 nA
RRMmax
; Tj= 125 °C; see Fig.6 −−10 µA
reverse recovery time when switched from IF= 0.5 A to
IR= 1 A; measured at IR= 0.25 A;
see Fig.9
diode capacitance VR= 0 V; f = 1 MHz; see Fig.7 − 20 −
; see Fig.5 −−1.0 V
jmax
−−1
µs
pF
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length = 10 mm 180 K/W
thermal resistance from junction to ambient note 1 340 K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.8.
For more information please refer to the
“General Part of associated Handbook”
.
1996 Sep 26 3 Not recommended for new designs
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