Philips BAQ806 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D168
BAQ806
AM PIN diode
Product specification
File under Discrete Semiconductors, SC10
1998 Aug 03
Philips Semiconductors Product specification
AM PIN diode BAQ806
FEATURES
• Glass passivated
• High maximum operating
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
temperature
• Low leakage current
• Excellent stability
• UL 94V-O classified plastic
package
handbook, 4 columns
ka
cathode
band
• Shipped in 12 mm embossed tape.
APPLICATIONS
Top view Side view
MSA474
• RF attenuator with low distortion for
frequencies above 100 kHz.
Fig.1 Simplified outline (SOD106) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
V
T
T
RRM
R
stg
j
repetitive peak reverse voltage − 100 V
continuous reverse voltage − 100 V
storage temperature −65 +175 °C
junction temperature −65 +150 °C
1998 Aug 03 2
Philips Semiconductors Product specification
AM PIN diode BAQ806
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
τ charge carrier life time when switched from I
C
d
r
D
r
s
forward voltage IF= 100 mA; see Figs 2 and 3 − 0.9 1.1 V
I
= 100 mA; Tj=T
F
j max
;
− 0.7 0.9 V
see Figs 2 and 3
reverse current VR= 100 V; see Fig. 4 −−0.1 µA
= 100 V; Tj= 125 °C; see Fig. 4 −−30 µA
V
R
= 10 mA to
F
15 25 −µs
IR= 6 mA; measured at 10% of IR;
see Fig. 13
diode capacitance f = 1 MHz; see Figs 5, 6, 7 and 8
=0V − 911pF
V
R
V
=2V − 56pF
R
diode forward resistance f = 100 kHz; see Figs 9 and 14
I
=10µA − 3300 6000 Ω
F
= 100 µA − 560 900 Ω
I
F
I
=1mA − 62 90 Ω
F
I
=10mA − 710Ω
F
diode series resistance f = 100 kHz; see Figs 10, 11and12
V
= 0 V 1000 2100 − kΩ
R
V
= 2 V 5000 12000 − kΩ
R
f = 1 MHz; see Figs 10, 11and 12
V
=0V 25 50 − kΩ
R
V
= 2 V 100 250 − kΩ
R
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 25 K/W
thermal resistance from junction to ambient note 1 100 K/W
note 2 150 K/W
Note
1. Device mounted on Al
printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig. 15
2O3
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig. 15.
For more information please refer to the
‘General Part of Handbook SC10’
1998 Aug 03 3
Philips Semiconductors Product specification
AM PIN diode BAQ806
GRAPHICAL DATA
4
10
handbook, halfpage
I
F
(mA)
3
10
2
10
10
1
−1
10
−2
10
0
Dotted line: Tj=T
Solid line: Tj=25°C.
0.4 2.00.8 1.2 1.6
.
j max
MGG500
VF (V)
Fig.2 Forward current as a function of forward
voltage; typical values.
4
10
handbook, halfpage
I
F
(mA)
3
10
2
10
10
1
−1
10
−2
10
0 0.4 2.00.8 1.2 1.6
Dotted line: Tj=T
Solid line: Tj=25°C.
j max
.
MGG501
VF (V)
Fig.3 Forward current as a function of forward
voltage; maximum values.
2
10
handbook, halfpage
I
R
(µA)
10
1
−1
10
VR = V
RRMmax.
MGG502
Tj (°C)
Fig.4 Reverse current as a function of junction
temperature; maximum values.
1500 50 100
1998 Aug 03 4
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