Philips BAP64-04W Datasheet
DISCRETE SEMICONDUCTORS
DATA SHEET
, halfpage
M3D102
BAP64-04W
Silicon PIN diode
Preliminary specification 1999 Dec 17
Philips Semiconductors Preliminary specification
Silicon PIN diode BAP64-04W
FEATURES
PINNING
• High voltage, current controlled
• RF resistor for RF attenuators and switches
• Low diode capacitance
• Low diode forward resistance
• Low series inductance
• For applications up to 3 GHz.
APPLICATIONS
handbook, halfpage
• RF attenuators and switches.
DESCRIPTION
Two planar PIN diodes in series configuration in a SOT323
small plastic SMD package.
Marking code: 4W-
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
PIN DESCRIPTION
1 anode
2 cathode
3 common connection
3
21
3
12
MAM434
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage − 100 V
continuous forward current − 100 mA
total power dissipation Ts=90°C − 250 mW
storage temperature −65 +150 °C
junction temperature −65 +150 °C
1999 Dec 17 2
Philips Semiconductors Preliminary specification
Silicon PIN diode BAP64-04W
ELECTRICAL CHARACTERISTICS
T
= 25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
V
F
I
R
C
d
r
D
τ
L
L
S
forward voltage IF=50mA 0.95 1.1 V
reverse current VR= 100 V − 10 µA
V
=20V − 1 µA
R
diode capacitance VR= 0; f = 1 MHz 0.52 − pF
V
= 1 V; f = 1 MHz 0.37 − pF
R
V
= 20 V; f = 1 MHz 0.23 0.35 pF
R
diode forward resistance IF= 0.5 mA; f = 100 MHz; note 1 20 40 Ω
= 1 mA; f = 100 MHz; note 1 10 20 Ω
I
F
I
= 10 mA; f = 100 MHz; note 1 2 3.8 Ω
F
I
= 100 mA; f = 100 MHz; note 1 0.7 1.35 Ω
F
charge carrier life time when switched from IF=10mA to
=6mA; RL= 100 Ω;
I
R
measured at I
=3mA
R
1.55 −µs
series inductance 1.4 − nH
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point tbd K/W
1999 Dec 17 3
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