Philips BAP64-03 Datasheet
DISCRETE SEMICONDUCTORS
a
DATA SHEET
ndbook, halfpage
M3D049
BAP64-03
Silicon PIN diode
Preliminary specification 1999 Jun 16
Philips Semiconductors Preliminary specification
Silicon PIN diode BAP64-03
FEATURES
• High voltage, current controlled
• RF resistor for RF attenuators and switches
• Low diode capacitance
PINNING
PIN DESCRIPTION
1 cathode
2 anode
• Low diode forward resistance
• Low series inductance
• For applications up to 3 GHz.
handbook, halfpage
12
APPLICATIONS
• RF attenuators and switches.
MAM406
DESCRIPTION
Marking code: A3.
Planar PIN diode in a SOD323 very small plastic SMD
package.
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage − 175 V
continuous forward current − 100 mA
total power dissipation Ts=90°C − 500 mW
storage temperature −65 +150 °C
junction temperature −65 +150 °C
1999 Jun 16 2
Philips Semiconductors Preliminary specification
Silicon PIN diode BAP64-03
ELECTRICAL CHARACTERISTICS
T
= 25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
r
D
τ
L
L
S
forward voltage IF=50mA − 0.95 1.1 V
= 175 V −−10 µA
V
reverse leakage current
diode capacitance
diode forward resistance
charge carrier life time when switched from IF=10mA to
R
=20V −−1 µA
V
R
=0; f=1MHz − 0.48 − pF
V
R
V
=1V; f=1MHz − 0.35 0.5 pF
R
V
=20V; f=1MHz − 0.23 0.35 pF
R
I
= 0.5 mA; f = 100 MHz; note 1 − 20 40 Ω
F
= 1 mA; f = 100 MHz; note 1 − 10 20 Ω
I
F
I
= 10 mA; f = 100 MHz; note 1 − 23.8Ω
F
I
= 100 mA; f = 100 MHz; note 1 − 0.7 1.35 Ω
F
− 1.55 −µs
I
=6mA; RL= 100 Ω;
R
measured at I
=3mA
R
series inductance − 1.68 − nH
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 120 K/W
1999 Jun 16 3
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