Philips BAP64-02 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D319
BAP64-02
Silicon PIN diode
Preliminary specification
Supersedes data of 1999 Jun 16
1999 Sep 21
Philips Semiconductors Preliminary specification
Silicon PIN diode BAP64-02
FEATURES
• High voltage, current controlled
• RF resistor for RF attenuators and switches
• Low diode capacitance
PINNING
PIN DESCRIPTION
1 cathode
2 anode
• Low diode forward resistance
• Very low series inductance
• For applications up to 3 GHz.
APPLICATIONS
handbook, halfpage
12
Top view
MAM405
• RF attenuators and switches.
DESCRIPTION
Marking code: S.
Planar PIN diode in a SOD523 ultra small plastic SMD
Fig.1 Simplified outline (SOD523) and symbol.
package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage − 175 V
continuous forward current − 100 mA
total power dissipation Ts=90°C − 715 mW
storage temperature −65 +150 °C
junction temperature −65 +150 °C
1999 Sep 21 2
Philips Semiconductors Preliminary specification
Silicon PIN diode BAP64-02
ELECTRICAL CHARACTERISTICS
Tj= 25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
r
D
τ
L
L
S
forward voltage IF=50mA − 0.95 1.1 V
reverse leakage current VR=175 V −−10 µA
V
=20V −−1µA
R
diode capacitance VR= 0; f = 1 MHz − 0.48 − pF
V
= 1 V; f = 1 MHz − 0.35 − pF
R
= 20 V; f = 1 MHz − 0.23 0.35 pF
V
R
diode forward resistance IF= 0.5 mA; f = 100 MHz; note 1 − 20 40 Ω
I
= 1 mA; f = 100 MHz; note 1 − 10 20 Ω
F
= 10 mA; f = 100 MHz; note 1 − 2 3.8 Ω
I
F
I
= 100 mA; f = 100 MHz; note 1 − 0.7 1.35 Ω
F
charge carrier life time when switchedfromIF=10mAto
− 1.55 −µs
IR= 6 mA; RL= 100 Ω;
measured at IR=3mA
series inductance − 0.6 − nH
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 85 K/W
1999 Sep 21 3
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