Philips BAP51-03 Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
book, halfpage
M3D049
BAP51-03
General purpose PIN diode
Preliminary specification Supersedes data of 1999 Apr 01
1999 May 10
Philips Semiconductors Preliminary specification
General purpose PIN diode BAP51-03
FEATURES
Low diode capacitance
Low diode forward resistance.
PINNING
PIN DESCRIPTION
1 cathode 2 anode
APPLICATIONS
General RF applications.
DESCRIPTION
handbook, halfpage
12
General purpose PIN diode in a SOD323 small plastic SMD package.
MAM406
Marking code: A5.
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage 60 V continuous forward current 60 mA total power dissipation TS=90°C 500 mW storage temperature 65 +150 °C junction temperature 65 +150 °C
1999 May 10 2
Philips Semiconductors Preliminary specification
General purpose PIN diode BAP51-03
ELECTRICAL CHARACTERISTICS
T
= 25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
R
I
R
C
d
r
D
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
forward voltage IF=50mA 0.95 1.1 V reverse voltage IR=10µA50−−V reverse current VR=50V −−100 nA diode capacitance VR= 0; f = 1 MHz 0.4 pF
V
= 1 V; f = 1 MHz 0.3 0.55 pF
R
V
= 5 V; f = 1 MHz 0.2 0.35 pF
R
diode forward resistance IF= 0.5 mA; f = 100 MHz; note 1 5.5 9
I
= 1 mA; f = 100 MHz; note 1 3.6 6.5
F
I
= 10 mA; f = 100 MHz; note 1 1.5 2.5
F
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 85 K/W
GRAPHICAL DATA
10
handbook, halfpage
r
D
()
5
2
1
1
10
MGS322
handbook, halfpage
(fF)
110
I
(mA)
F
500
C
d
400
300
200
100
0
020
4 8 12 16
MGS323
V
(V)
R
f =100 MHz; Tj=25°C.
Fig.2 Forward resistance as a function of the
forward current; typical values.
1999 May 10 3
f = 1 MHz; Tj=25°C.
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
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