Philips bap51 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D319
BAP51-02
General purpose PIN diode
Product specification
Supersedes data of 1999 Jul 01
2000 Jul 06
Philips Semiconductors Product specification
General purpose PIN diode BAP51-02
FEATURES
• Low diode capacitance
• Low diode forward resistance.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
APPLICATIONS
• General RF applications.
handbook, halfpage
12
DESCRIPTION
General purpose PIN diodein a SOD523 ultra small SMD
plastic package.
Top view
Marking code: K1.
MAM405
Fig.1 Simplified outline (SOD523) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage − 60 V
continuous forward current − 50 mA
total power dissipation Ts=90°C − 715 mW
storage temperature −65 +150 °C
junction temperature −65 +150 °C
ELECTRICAL CHARACTERISTICS
Tj= 25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
R
I
R
C
d
r
D
forward voltage IF=50mA − 0.95 1.1 V
reverse voltage IR=10µA50−−V
reverse current VR=50V −−100 nA
diode capacitance VR= 0; f = 1 MHz − 0.4 − pF
V
= 1 V; f = 1 MHz − 0.3 0.55 pF
R
= 5 V; f = 1 MHz − 0.2 0.35 pF
V
R
diode forward resistance IF= 0.5 mA; f = 100 MHz; note 1 − 5.5 9 Ω
I
= 1 mA; f = 100 MHz; note 1 − 3.6 6.5 Ω
F
I
= 10 mA; f = 100 MHz; note 1 − 1.5 2.5 Ω
F
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 85 K/W
2000 Jul 06 2
Philips Semiconductors Product specification
General purpose PIN diode BAP51-02
GRAPHICAL DATA
10
handbook, halfpage
r
D
(Ω)
5
2
1
−1
10
f = 100 MHz; Tj=25°C.
110
MGS322
I
(mA)
F
Fig.2 Forward resistance as a function of forward
current; typical values.
500
handbook, halfpage
C
d
(fF)
400
300
200
100
0
020
f = 1 MHz; Tj=25°C.
4 8 12 16
MGS323
V
(V)
R
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
0
2
|s21|
(dB)
−0.5
−1
−1.5
−2
−2.5
0.5 3
(1) IF= 10 mA. (2) IF= 1 mA. (3) IF= 0.5 mA.
Diodeinsertedinseries witha 50 Ω stripline circuit and biased via the
analyzer Tee network.
=25°C.
T
amb
1 1.5 2 2.5
(1) (2) (3)
MGT264
f (GHz)
Fig.4 Insertion loss (|s21|2) of the diode as a
function of frequency; typical values.
handbook, halfpage
0
2
|s21|
(dB)
−5
−10
−15
−20
−25
0.5 3
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
T
=25°C.
amb
1 1.5 2 2.5
MGT265
f (GHz)
Fig.5 Isolation (|s21|2) of the diode as a function of
frequency; typical values.
2000 Jul 06 3
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