Philips BAP50-05 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

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M3D088

BAP50-05

General purpose PIN diode

Product specification
Supersedes data of 1999 Feb 01

1999 May 10

Philips Semiconductors Product specification

General purpose PIN diode BAP50-05

FEATURES

PINNING

• Two elements in common cathode configuration in a
small-sized plastic SMD package

• Low diode capacitance

• Low diode forward resistance.

APPLICATIONS

• General RF applications.

lumns

DESCRIPTION

Two planar PIN diodes in common cathode configuration
in a SOT23 small plastic SMD package.

Top view

Marking code: 1Cp.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

PIN DESCRIPTION

1 anode
2 anode
3 common cathode

21

21

3

3

MAM108

Fig.1 Simplified outline (SOT23) and symbol.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

V

R

I

F

P

tot

T

stg

T

j

continuous reverse voltage − 50 V
continuous forward current − 50 mA
total power dissipation Ts=90°C − 250 mW
storage temperature −65 +150 °C
junction temperature −65 +150 °C

1999 May 10 2

Philips Semiconductors Product specification

General purpose PIN diode BAP50-05

ELECTRICAL CHARACTERISTICS

T

= 25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per diode

V

F

V

R

I

R

C

d

r

D

Note

1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.

forward voltage IF=50mA − 0.95 1.1 V
reverse voltage IR=10µA50−−V
reverse current VR=50V −−100 nA
diode capacitance VR= 0; f = 1 MHz − 0.45 − pF

V

= 1 V; f = 1 MHz − 0.35 0.6 pF

R

V

= 5 V; f = 1 MHz − 0.3 0.5 pF

R

diode forward resistance IF= 0.5 mA; f = 100 MHz; note 1 − 25 40 Ω

= 1 mA; f = 100 MHz; note 1 − 14 25 Ω

I

F

I

= 10 mA; f = 100 MHz; note 1 − 35Ω

F

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point 220 K/W

1999 May 10 3