Philips BAP50-04 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
, halfpage
M3D088
BAP50-04
General purpose PIN diode
Preliminary specification
1999 May 10
Philips Semiconductors Preliminary specification
General purpose PIN diode BAP50-04
FEATURES
PINNING
• Two elements in series configuration in a small-sized
plastic SMD package
• Low diode capacitance
• Low diode forward resistance.
APPLICATIONS
• General RF applications.
handbook, halfpage
DESCRIPTION
Two planar PIN diodes in series configuration in a SOT23
small plastic SMD package.
Marking code: 4Lp.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
PIN DESCRIPTION
1 anode
2 cathode
3 common connection
21
3
3
MAM232
Fig.1 Simplified outline (SOT23) and symbol.
12
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage − 50 V
continuous forward current − 50 mA
total power dissipation Ts=90°C − 250 mW
storage temperature −65 +150 °C
junction temperature −65 +150 °C
1999 May 10 2
Philips Semiconductors Preliminary specification
General purpose PIN diode BAP50-04
ELECTRICAL CHARACTERISTICS
T
= 25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per diode
V
F
V
R
I
R
C
d
r
D
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
forward voltage IF=50mA − 0.95 1.1 V
reverse voltage IR=10µA50−−V
reverse current VR=50V −−100 nA
diode capacitance VR= 0; f = 1 MHz − 0.45 − pF
V
= 1 V; f = 1 MHz − 0.35 0.6 pF
R
V
= 5 V; f = 1 MHz − 0.3 0.5 pF
R
diode forward resistance IF= 0.5 mA; f = 100 MHz; note 1 − 25 40 Ω
= 1 mA; f = 100 MHz; note 1 − 14 25 Ω
I
F
I
= 10 mA; f = 100 MHz; note 1 − 35Ω
F
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 220 K/W
1999 May 10 3
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