Philips BAP50-03 User Manual

DISCRETE SEMICONDUCTORS

DATA SH EET

BAP50-03

General purpose PIN diode

Product specification
Supersedes data of 1999 May 10

2004 Feb 11

Philips Semiconductors Product specification

General purpose PIN diode BAP50-03

FEATURES

• Low diode capacitance

• Low diode forward resistance.

PINNING

PIN DESCRIPTION

1 cathode
2 anode

APPLICATIONS

• General RF applications.

DESCRIPTION

General purpose PIN diode in a SOD323 small plastic

21

SMD package.

Top view

Marking code: A8.
The marking bar indicates the cathode.

sym006

Fig.1 Simplified outline (SOD323) and symbol.

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

BAP50-03 − plastic surface mounted package; 2 leads SOD323

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

R

I

F

P

tot

T

stg

T

j

continuous reverse voltage − 50 V
continuous forward current − 50 mA
total power dissipation Ts=90°C − 500 mW
storage temperature −65 +150 °C
junction temperature −65 +150 °C

2004 Feb 11 2

Philips Semiconductors Product specification

General purpose PIN diode BAP50-03

ELECTRICAL CHARACTERISTICS

Tj= 25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

V

R

I

R

C

d

r

D

Note

1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.

forward voltage IF=50mA − 0.95 1.1 V
reverse voltage IR=10µA50−−V
reverse current VR=50V −−100 nA
diode capacitance VR= 0; f = 1 MHz − 0.4 − pF

VR= 1 V; f = 1 MHz − 0.3 0.55 pF
VR= 5 V; f = 1 MHz − 0.2 0.35 pF

diode forward resistance IF= 0.5 mA; f = 100 MHz; note 1 − 25 40 Ω

IF= 1 mA; f = 100 MHz; note 1 − 14 25 Ω
IF= 10 mA; f = 100 MHz; note 1 − 35Ω

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th(j-s)

thermal resistance from junction to soldering point 85 K/W

2004 Feb 11 3