Philips bap50 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
, halfpage
M3D049
BAP50-03
General purpose PIN diode
Product specification
Supersedes data of 1999 Feb 01
1999 May 10
Philips Semiconductors Product specification
General purpose PIN diode BAP50-03
FEATURES
• Low diode capacitance
• Low diode forward resistance.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
APPLICATIONS
• General RF applications.
DESCRIPTION
handbook, halfpage
12
General purpose PIN diode in a SOD323 small plastic
SMD package.
MAM406
Marking code: A8.
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage − 50 V
continuous forward current − 50 mA
total power dissipation Ts=90°C − 500 mW
storage temperature −65 +150 °C
junction temperature −65 +150 °C
1999 May 10 2
Philips Semiconductors Product specification
General purpose PIN diode BAP50-03
ELECTRICAL CHARACTERISTICS
T
= 25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
R
I
R
C
d
r
D
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
forward voltage IF=50mA − 0.95 1.1 V
reverse voltage IR=10µA50−−V
reverse current VR=50V −−100 nA
diode capacitance VR= 0; f = 1 MHz − 0.4 − pF
V
= 1 V; f = 1 MHz − 0.3 0.55 pF
R
V
= 5 V; f = 1 MHz − 0.2 0.35 pF
R
diode forward resistance IF= 0.5 mA; f = 100 MHz; note 1 − 25 40 Ω
I
= 1 mA; f = 100 MHz; note 1 − 14 25 Ω
F
I
= 10 mA; f = 100 MHz; note 1 − 35Ω
F
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 85 K/W
1999 May 10 3
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