Philips 74LVU04N, 74LVU04DB, 74LVU04D, 74LVU04PW Datasheet

INTEGRATED CIRCUITS

74LVU04

Hex inverter

Product specification Supersedes data of 1997 Feb 12 IC24 Data Handbook

 

1998 Apr 20

Philips Semiconductors Product specification

74L VU04Hex inverter

FEA TURES

•Wide operating voltage: 1.0 to 5.5 V

•Optimized for Low Voltage applications: 1.0 to 3.6 V

•Accepts TTL input levels between V

•Typical V

T

amb

•Typical V

T

amb

(output ground bounce) < 0.8 V at VCC = 3.3 V,

OLP

= 25°C.

(output VOH undershoot) > 2 V at VCC = 3.3 V,

OHV

= 25°C.

= 2.7 V and VCC = 3.6 V

CC

•Output capability: standard

•I

category: SSI

CC

QUICK REFERENCE DATA

GND = 0 V; T

SYMBOL

t

NOTES:

1. C

is used to determine the dynamic power dissipation (PD in µW)

PD

= CPD  V

P

D

f

= input frequency in MHz; CL = output load capacitance in pF;

i

= output frequency in MHz; VCC = supply voltage in V;

f

o

 (C

L

2. The condition is V

= 25°C; tr = tf 2.5 ns

amb

PHL/tPLH

C

I

C

PD

CC

2

 V

 fo) = sum of the outputs.

CC

PARAMETER CONDITIONS TYPICAL UNIT

Propagation delay nA to nY

Input capacitance 3.5 pF Power dissipation capacitance per gate Notes 1, 2 18 pF

2

 fi  (CL  V

= GND to V

I

CC.

2

 fo) where:

CC

DESCRIPTION

The 74LVU04 is a low-voltage, Si-gate CMOS device and is pin compatible with the 74HCU04.

The 74LVU04 is a general purpose hex inverter. Each of the six inverters is a single stage with unbuffered outputs.

CL = 15 pF; VCC = 3.3 V

6 ns

ORDERING INFORMATION

PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA PKG. DWG. #

14-Pin Plastic DIL –40°C to +125°C 74LVU04 N 74LVU04 N SOT27-1 14-Pin Plastic SO –40°C to +125°C 74LVU04 D 74LVU04 D SOT108-1 14-Pin Plastic SSOP Type II –40°C to +125°C 74LVU04 DB 74LVU04 DB SOT337-1 14-Pin Plastic TSSOP Type I –40°C to +125°C 74LVU04 PW 74LVU04PW DH SOT402-1

PIN DESCRIPTION

PIN NUMBER SYMBOL NAME AND FUNCTION

1, 3, 5, 9, 11, 13 1A – 6A Data inputs 2, 4, 6, 8, 10, 12 1Y – 6Y Data outputs 7 GND Ground (0 V) 14 V

CC

Positive supply voltage

FUNCTION TABLE

INPUTS OUTPUTS

nA nY

L H

H L

NOTES:

H = HIGH voltage level L = LOW voltage level

1998 Apr 20 853–1918 19257

2

Philips Semiconductors Product specification

Hex inverter

PIN CONFIGURATION

1

1A

2

1Y

3

2A

4

2Y

5

3A

6

3Y

GND

7

LOGIC SYMBOL (IEEE/IEC)

12

34

56

1

14

V

13

6A

12

6Y

11

5A

10

5Y

9

4A

8

4Y

SV00396

CC

74LVU04

LOGIC SYMBOL

2Y

6Y

SV00397

V

CCVCC

2

4

6

8

10

12

1A 1Y

1

2A

3

5

3A 3Y

4A 4Y

9

11

5A 5Y

6A

13

SCHEMATIC DIAGRAM (ONE INVERTER)

V

CC

98

11 10

13 12

1



1

SV00398

100

nA nY

170



SV00400

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V

T

amb

tr, t

NOTE:

1. The LV is guaranteed to function down to V

DC supply voltage See Note1 1.0 3.3 5.5 V

CC

Input voltage 0 – V

I

Output voltage 0 – V

O

Operating ambient temperature range in free air

Input rise and fall times

f

CC

See DC and AC

characteristics

VCC = 1.0V to 2.0V VCC = 2.0V to 2.7V VCC = 2.7V to 3.6V VCC = 3.6V to 5.5V

= 1.0V (input levels GND or VCC); DC characteristics are guaranteed from VCC = 1.2V to VCC = 5.5V.

–40 –40

– – – –

CC CC

+85

+125

500 200 100

50

ns/V

V V

°C

1998 Apr 20

3

Philips Semiconductors Product specification

V

voltage

V

voltage

Hex inverter

ABSOLUTE MAXIMUM RATINGS

1, 2

74LVU04

In accordance with the Absolute Maximum Rating System (IEC 134). Voltages are referenced to GND (ground = 0V).

SYMBOL

V

CC

I

IK

I

OK

I

O

I

GND

I

CC

T

stg

P

TOT

DC supply voltage –0.5 to +7.0 V DC input diode current VI < –0.5 or VI > VCC + 0.5V 20 mA DC output diode current VO < –0.5 or VO > VCC + 0.5V 50 mA DC output source or sink current

– standard outputs DC VCC or GND current for types with

,

– standard outputs 50 Storage temperature range –65 to +150 °C

Power dissipation per package – plastic DIL – plastic mini-pack (SO) – plastic shrink mini-pack (SSOP and TSSOP)

PARAMETER CONDITIONS RATING UNIT

–0.5V < VO < VCC + 0.5V

25

mA

for temperature range: –40 to +125°C above +70°C derate linearly with 12 mW/K above +70°C derate linearly with 8 mW/K above +60°C derate linearly with 5.5 mW/K

750 500 400

mW

NOTE:

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability .

2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

DC ELECTRICAL CHARACTERISTICS

Over recommended operating conditions. V oltages are referenced to GND (ground = 0V).

SYMBOL P ARAMETER TEST CONDITIONS

VCC = 1.2V 1.0 1.0

IH

HIGH level Input voltage

VCC = 2.0V 1.6 1.6 VCC = 2.7 to 3.6V 2.4 2.4 VCC = 4.5 to 5.5V 0.8V VCC = 1.2V 0.2 0.2

IL

LOW level Input voltage

VCC = 2.0V 0.4 0.4 VCC = 2.7 to 3.6V 0.5 0.5 VCC = 4.5 to 5.5 0.2V VCC = 1.2V; VI = VIH or V VCC = 2.0V; VI = VIH or V

OH

HIGH level output

VCC = 2.7V; VI = VIH or V

V

VCC = 3.0V; VI = VIH or V VCC = 4.5V;VI = VIH or V

OH

HIGH level output voltage

VCC = 3.0V;VI = VIH or V VCC = 4.5V;VI = VIH or V VCC = 1.2V; VI = VIH or V VCC = 2.0V; VI = VIH or V

OL

LOW level output

VCC = 2.7V; VI = VIH or V

V

VCC = 3.0V;VI = VIH or V VCC = 4.5V;VI = VIH or V

–IO = 100µA 1.2

IL;

–IO = 100µA 1.8 2.0 1.8

IL;

–IO = 100µA 2.5 2.7 2.5

IL;

–IO = 100µA 2.8 3.0 2.8

IL;

–IO = 100µA 4.3 4.5 4.3

IL;

–IO = 6mA 2.40 2.82 2.20

IL;

–IO = 12mA 3.60 4.20 3.50

IL;

IO = 100µA 0

IL;

IO = 100µA 0 0.2 0.2

IL;

IO = 100µA 0 0.2 0.2

IL;

IO = 100µA 0 0.2 0.2

IL;

IO = 100µA 0 0.2 0.2

IL;

-40°C to +85°C -40°C to +125°C

MIN TYP

CC

LIMITS

1

MAX MIN MAX

0.8V

CC

0.2V

UNIT

CC

V

1998 Apr 20

4

Philips Semiconductors Product specification

V

CONDITION

nA to nY

Hex inverter

DC ELECTRICAL CHARACTERISTICS (Continued)

SYMBOL PARAMETER TEST CONDITIONS

LOW level output

OL

voltage

±I

I

∆I

Input leakage current VCC = 5.5V; VI = VCC or GND 1.0 1.0 µA

I

Quiescent supply

CC

current Additional quiescent

CC

supply current per input

VCC = 3.0V;VI = VIH or V VCC = 4.5V;VI = VIH or V

VCC = 5.5V; VI = VCC or GND; IO = 0 20.0 40.0 µA

VCC = 2.7V to 3.6V; VI = VCC –0.6V 500 850 µA

NOTE:

1. All typical values are measured at T

amb

= 25°C.

AC CHARACTERISTICS

GND = 0V; tr = tf = 2.5ns; CL = 50pF; RL = 500Ω

SYMBOL PARAMETER WAVEFORM

t

PHL/PLH

NOTES:

1. Unless otherwise stated, all typical values are measured at T

2. Typical values are measured at V

Propagation delay

= 3.3 V.

CC

Figure 1

IL; IL;

3.0 to 3.6 7

4.5 to 5.5 7 9

amb

74LVU04

LIMITS

-40°C to +85°C -40°C to +125°C

MIN TYP

IO = 6mA 0.25 0.40 0.50 IO = 12mA 0.35 0.55 0.65

VCC(V) MIN TYP

1.2 35

2.0 12 14 17

2.7 9 10 13

= 25°C

1

MAX MIN MAX

LIMITS

–40 to +85 °C –40 to +125 °C

1

MAX MIN MAX

2

8 10

UNIT

ns

AC WAVEFORMS

VM = 1.5 V at VCC  2.7 V and ≤ 3.6 V V

= 0.5 × VCC at VCC < 2.7 V and ≥ 4.5 V

M

V

and VOH are the typical output voltage drop that occur with the

OL

output load.

V

I

nA INPUT

GND

V

OH

nY OUTPUT

V

OL

Figure 1. Input (nA) to output (nY) propagation delays

and output transition times.

V

M

t

PHL

V

M

t

PLH

SV00395

TYPICAL TRANSFER CHARACTERISTICS

1.2

V

o

(V)

0.8

0.4

0

0 0.4 0.8

V

O

VCC = 1.2 V; IO = 0 V.

I

Figure 2.

Vi (V)

D

1.2

SV00401

300

200

100

0

I

D

(mA)

1998 Apr 20

5