Philips 74LVT574DB Datasheet

74LVT574
3.3V Octal D-type flip-flop (3-State)
Product specification Supersedes data of 1995 Nov 14 IC23 Data Handbook
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1998 Feb 19
Philips Semiconductors Product specification
74L VT5743.3V Octal D-type flip-flop (3-State)
FEA TURES
Inputs and outputs on opposite side of package allow easy
interface to microprocessors
3-State outputs for bus interfacing
Common output enable
TTL input and output switching levels
Input and output interface capability to systems at 5V supply
Bus-hold data inputs eliminate the need for external pull-up
resistors to hold unused inputs
Live insertion/extraction permitted
No bus current loading when output is tied to 5V bus
Power-up 3-State
Power-up reset
Latch-up protection exceeds 500mA per JEDEC Std 17
ESD protection exceeds 2000V per MIL STD 883 Method 3015
and 200V per Machine Model
QUICK REFERENCE DATA
SYMBOL PARAMETER
C
t
PLH
t
PHL
C
OUT
I
CCZ
IN
Propagation delay CP to Qn
Input capacitance VI = 0V or 3.0V 4 pF Output capacitance
Total supply current
DESCRIPTION
The LVT574 is a high-performance BiCMOS product designed for V
operation at 3.3V .
CC
This device is an 8-bit, edge triggered register coupled to eight 3-State output buffers. The two sections of the device are controlled independently by the clock (CP) and Output Enable (OE gates. The state of each D input (one set-up time before the Low-to-High clock transition) is transferred to the corresponding flip-flop’s Q output.
The 3-State output buffers are designed to drive heavily loaded 3-State buses, MOS memories, or MOS microprocessors. The active-Low Output Enable (OE independent of the clock operation.
When OE is Low, the stored data appears at the outputs. When OE is High, the outputs are in the High-impedance “off” state, which means they will neither drive nor load the bus.
CONDITIONS
T
= 25°C; GND = 0V
amb
CL = 50pF; VCC = 3.3V
Outputs disabled; V
= 0V or 3.0V
I/O
Outputs disabled; VCC = 3.6V
) control
) controls all eight 3-State buffers
TYPICAL UNIT
3.6
4.3
ns
8 pF
0.13 mA
ORDERING INFORMATION
PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER
20-Pin Plastic SOL –40°C to +85°C 74LVT574 D 74LVT574 D SOT163-1 20-Pin Plastic SSOP Type II –40°C to +85°C 74LVT574 DB 74LVT574 DB SOT339-1 20-Pin Plastic TSSOP Type I –40°C to +85°C 74LVT574 PW 74LVT574PW DH SOT360-1
PIN CONFIGURATION
1
OE
2
D0
3
D1
4
D2
5
D3 D4
6
D5
7
D6
8
D7
9
GND
10 11
20 19 18 17 16 15 14 13 12
SV00041
V Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7 CP
CC
LOGIC SYMBOL
11
CP
1
OE
23456789
D0 D1 D2 D3 D4 D5 D6 D7
Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7
19 18 17 16 15 14 13 12
SV00042
1998 Feb 19 853-1746 18988
2
Philips Semiconductors Product specification
74LVT5743.3V Octal D-type flip-flop (3-State)
LOGIC SYMBOL (IEEE/IEC)
PIN DESCRIPTION
PIN NUMBER SYMBOL FUNCTION
1
EN
11
C1
2
1D
3
4
5 6
7 8
9
19 18
17
16 15
14 13
12
SV00033
2, 3, 4, 5, 6, 7, 8, 9 D0-D7 Data inputs
1 OE
19, 18, 17, 16, 15,
14, 13, 12
Q0-Q7 Data outputs
11 CP 10 GND Ground (0V)
20 V
CC
FUNCTION TABLE
INPUTS INTERNAL OUTPUTS OPERATING
OE CP Dn REGISTER Q0 – Q7 MODE
L L
L X NC NC Hold
H X X NC Z Disable outputs
H = High voltage level h = High voltage level one set-up time prior to the Low-to-High clock transition L = Low voltage level l = Low voltage level one set-up time prior to the Low-to-High clock transition NC= No change X = Don’t care Z = High impedance “off” state = Low-to-High clock transition
= not a Low-to-High clock transition
↑ ↑
l
h
L
H
L
H
Load and read register
Output enable input (active-low)
Clock pulse input (active rising edge)
Positive supply voltage
LOGIC DIAGRAM
D0
11
CP
1
OE
1998 Feb 19
2
D
CP Q
Q0
D1
3
D
CP Q
19
Q1
D2
4
D
CP Q
18
Q2
D3
5
D
CP Q
17
Q3
D4
6
D
CP Q
16
Q4
D5
7
D
CP Q
15
Q5
D6
8
D
CP Q
14
Q6
D7
9
D
CP Q
13
12
Q7
SV00043
3
Philips Semiconductors Product specification
I
DC output current
mA
SYMBOL
PARAMETER
UNIT
I
mA
74LVT5743.3V Octal D-type flip-flop (3-State)
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CC
I
IK
V
I
I
OK
V
OUT
DC supply voltage –0.5 to +4.6 V DC input diode current VI < 0 –50 mA DC input voltage DC output diode current VO < 0 –50 mA DC output voltage
PARAMETER CONDITIONS RATING UNIT
3
1, 2
–0.5 to +7.0 V
3
Output in Off or High state –0.5 to +7.0 V
Output in Low state 128
OUT
T
stg
p
Output in High state –64
Storage temperature range –65 to 150 °C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability .
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
LIMITS
MIN MAX
V
CC
V
I
V
IH
V
IL
I
OH
OL
t/v Input transition rise or fall rate; outputs enabled 10 ns/V
T
amb
DC supply voltage 2.7 3.6 V Input voltage 0 5.5 V High-level input voltage 2.0 V Input voltage 0.8 V High-level output current –32 mA Low-level output current 32 Low-level output current; current duty cycle 50%, f 1kHz 64
Operating free-air temperature range –40 +85 °C
1998 Feb 19
4
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