Philips 74LVT20PW, 74LVT20DB, 74LVT20D Datasheet

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74LVT20

3.3V Dual 4-input NAND gate

Product specification 1996 Aug 28

INTEGRATED CIRCUITS

IC24 Data Handbook

Philips Semiconductors Product specification

74LVT203.3V Dual 4-input NAND gate

2

1996 Aug 28 853-1871 17244

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS

T

amb

= 25°C;

GND = 0V

TYPICAL UNIT

t

PLH

t

PHL

Propagation
delay
An, Bn, Cn, Dn
to Y

n

CL = 50pF;
V

CC

= 3.3V

3.4

3.2

ns

C

IN

Input
capacitance

VI = 0V or 3.0V 3 pF

I

CCL

Total supply
current

Outputs Low;
V

CC

= 3.6V

0.5 mA

PIN CONFIGURATION

14
13
12
11
10

9
87

6

5

4

3

2

1

GND

V

CC

B1
A1
Y1

NC

D1
C1

A0
B0

Y

0

NC

C0
D0

SA00350

PIN DESCRIPTION

PIN

NUMBER

SYMBOL NAME AND FUNCTION

1, 2, 4, 5, 9,

10, 12, 13

An, Bn,
Cn, Dn

Data inputs

6, 8 Yn Data outputs

7 GND Ground (0V)

14 V

CC

Positive supply voltage

LOGIC SYMBOL

D0 A1 B1A0 B0 C0 C1 D1

Y0 Y1

6 8

1 2 4 5 9 10 12 13

VCC = Pin 14
GND = Pin 7

SA00351

LOGIC DIAGRAM

VCC = Pin 14
GND = Pin 7

SA00352

Y0

6

1
2
4

A0
B0
C0

5

D0

Y1

8

9
10
12

A1
B1
C1

13

D1

SF00068

&

6

8

1

2
4

5

9

10
12

13

FUNCTION TABLE

INPUTS OUTPUT

Dna Dnb Dnc Dnd Qn

L X X X H
X L X X H
X X L X H
X X X L H

H H H H L

NOTES:

H = High voltage level
L = Low voltage level
X = Don’t care

ORDERING INFORMATION

PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER

14-Pin Plastic SO –40°C to +85°C 74LVT20 D 74LVT20 D SOT108-1
14-Pin Plastic SSOP –40°C to +85°C 74LVT20 DB 74LVT20 DB SOT337-1
14-Pin PlasticTSSOP –40°C to +85°C 74LVT20 PW 74LVT20PW DH SOT402-1

LOGIC SYMBOL (IEEE/IEC)

Philips Semiconductors Product specification

74LVT203.3V Dual 4-input NAND gate

1996 Aug 28

3

ABSOLUTE MAXIMUM RATINGS

1, 2

SYMBOL

PARAMETER CONDITIONS RATING UNIT

V

CC

DC supply voltage –0.5 to +4.6 V

I

IK

DC input diode current VI < 0 –50 mA

V

I

DC input voltage

3

–0.5 to +7.0 V

I

OK

DC output diode current VO < 0 –50 mA

V

OUT

DC output voltage

3

Output in Off or High state –0.5 to +7.0 V

Output in High state –32

I

OUT

DC output current

Output in Low state 64

mA

T

stg

Storage temperature range –65 to 150 °C

NOTES:

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.

2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.

3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.

RECOMMENDED OPERATING CONDITIONS

LIMITS

SYMBOL

PARAMETER

MIN MAX

UNIT

V

CC

DC supply voltage 2.7 3.6 V

V

I

Input voltage 0 5.5 V

V

IH

High-level input voltage 2.0 V

V

IL

Low-level Input voltage 0.8 V

I

OH

High-level output current –20 mA
Low-level output current 32

I

OL

Low-level output current; current duty cycle ≤ 50%, f ≥ 1kHz 48

mA

T

amb

Operating free-air temperature range –40 +85 °C