INTEGRATED CIRCUITS
74LVT126
3.3V Quad buffer (3-State)
Product specification
Supersedes data of 1995 Dec 21
IC23 Data Handbook
1998 Feb 19
Philips Semiconductors Product specification
74L VT1263.3V Quad buffer (3-State)
FEA TURES
•Quad bus interface
•3-State buffers
•Output capability: +64mA/-32mA
•TTL input and output switching levels
•Input and output interface capability to systems at 5V supply
•Bus-hold data inputs eliminate the need for external pull-up
resistors to hold unused inputs
•Live insertion/extraction permitted
•No bus current loading when output is tied to 5V bus
•Power-up 3-State
•Latch-up protection exceeds 500mA per JEDEC Std 17
•ESD protection exceeds 2000V per MIL STD 883 Method 3015
and 200V per Machine Model
QUICK REFERENCE DATA
SYMBOL PARAMETER
C
t
PLH
t
PHL
C
OUT
I
CCZ
IN
Propagation delay
An to Yn
CL = 50pF; VCC = 3.3V
Input capacitance VI = 0V or V
Output capacitance Outputs disabled; VO = 0V or 3.0V 8 pF
Total supply current Outputs disabled; VCC = 3.6V 0.13 mA
DESCRIPTION
The LVT126 is a high-performance BiCMOS product designed for
V
operation at 3.3V .
CC
This device combines low static and dynamic power dissipation with
high speed and high output drive.
The 74LVT126 device is a quad buffer that is ideal for driving bus
lines. The device features four Output Enables (OE0, OE1, OE2,
OE3), each controlling one of the 3-State outputs.
CONDITIONS
T
= 25°C; GND = 0V
amb
CC
TYPICAL UNIT
2.3
2.4
4 pF
ns
ORDERING INFORMATION
PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER
14-Pin Plastic SO –40°C to +85°C 74LVT126 D 74LVT126 D SOT108-1
14-Pin Plastic SSOP –40°C to +85°C 74LVT126 DB 74LVT126 DB SOT337-1
14-Pin Plastic TSSOP –40°C to +85°C 74LVT126 PW 74LVT126PW DH SOT402-1
PIN DESCRIPTION
PIN NUMBER SYMBOL NAME AND FUNCTION
2, 5, 9, 12 A0 – A3 Data inputs
3, 6, 8, 11 Y0 – Y3 Data outputs
1, 4, 10, 13 OE0 – OE3 Output enable inputs
7 GND Ground (0V)
14 V
PIN CONFIGURATION
OE0
1
A0
2
Y0
3
OE1
4
A1
5
Y1
6
GND Y2
78
14
V
OE3
13
A3
12
Y3
11
OE2
10
A2
9
SA00031
CC
CC
Positive supply voltage
LOGIC SYMBOL
1
OE0
2
A0
4
OE1
5
A1
10
OE2
9
A2
13
OE3
12
A3
3
Y0
6
Y1
8
Y2
11
Y3
SV00093
1998 Feb 19 853-1822 18991
2
Philips Semiconductors Product specification
74LVT1263.3V Quad buffer (3-State)
LOGIC SYMBOL (IEEE/IEC)
FUNCTION TABLE
INPUTS OUTPUTS
1
EN
2
4
5
10
9
13
12
1
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CC
V
I
V
OUT
OUT
I
IK
I
OK
T
stg
DC supply voltage –0.5 to +4.6 V
DC input voltage
DC output voltage
p
DC input diode current VI < 0 –50 mA
DC output diode current VO < 0 –50 mA
Storage temperature range –65 to 150 °C
PARAMETER CONDITIONS RATING UNIT
3
3
11
SV00134
1, 2
3
6
8
H =High voltage level
L =Low voltage level
X = Don’t care
Z =High impedance ”off” state
Output in Off or High state –0.5 to +7.0 V
Output in Low state 128 mA
Out in High State –64 mA
OEn An Yn
H L L
H H H
L X Z
–0.5 to +7.0 V
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER LIMITS UNIT
1998 Feb 19
MIN MAX
V
CC
V
V
V
I
OH
DC supply voltage 2.7 3.6 V
Input voltage 0 5.5 V
I
High-level input voltage 2.0 V
IH
Low-level input voltage 0.8 V
IL
High-level output current –32 mA
Low-level output current 32
OL
Low-level output current; current duty cycle ≤ 50%, f ≥ 1kHz 64
∆t/∆v Input transition rise or fall rate; outputs enabled 10 ns/V
T
amb
Operating free-air temperature range –40 +85 °C
3