Philips 74LVC2G04 Technical data
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74LVC2G04
Dual inverter
Product specification
Supersedes data of 2003 Jul 22
2004 Sep 15
Philips Semiconductors Product specification
Dual inverter 74LVC2G04
FEATURES
• Wide supply voltage range from 1.65 V to 5.5 V
• 5 V tolerant input/output for interfacing with 5 V logic
• High noise immunity
• Complies with JEDEC standard:
– JESD8-7 (1.65 V to 1.95 V)
– JESD8-5 (2.3 V to 2.7 V)
– JESD8B/JESD36 (2.7 V to 3.6 V).
• ESD protection:
– HBM EIA/JESD22-A114-B exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V.
•±24 mA output drive (VCC= 3.0 V)
• CMOS low power consumption
• Latch-up performance exceeds 250 mA
• Direct interface with TTL levels
• Multiple package options
• Specified from −40 °C to +85 °C and
−40 °C to +125 °C.
QUICK REFERENCE DATA
GND = 0 V; T
amb
=25°C.
DESCRIPTION
The 74LVC2G04 is a high-performance, low-power,
low-voltage, Si-gate CMOS device and superior to most
advanced CMOS compatible TTL families.
Inputs can be driven from either 3.3 V or 5 V devices.
These feature allows the use of these devices as
translators in a mixed 3.3 V and 5 V environment.
This device is fully specified for partial power-down
applications usingI
. The I
off
circuitry disables the output,
off
preventing the damaging backflow current through the
device when it is powered down.
The 74LVC2G04 provides two inverting buffers.
SYMBOL PARAMETER CONDITIONS TYPICAL UNIT
t
PHL/tPLH
propagation delay inputs nA to
outputs nY
VCC= 1.8 V; CL= 30 pF; RL=1kΩ 3.5 ns
VCC= 2.5 V; CL= 30 pF; RL= 500 Ω 2.2 ns
VCC= 2.7 V; CL= 50 pF; RL= 500 Ω 2.7 ns
V
= 3.3 V; CL= 50 pF; RL= 500 Ω 2.7 ns
CC
VCC= 5.0 V; CL= 50 pF; RL= 500 Ω 1.9 ns
C
I
C
PD
input capacitance 2.5 pF
power dissipation capacitance per gate VCC= 3.3 V; notes 1 and 2 13.5 pF
Notes
1. C
is used to determine the dynamic power dissipation (PDin µW).
PD
PD=CPD× V
2
× fi× N+∑(CL× V
CC
2
× fo) where:
CC
fi= input frequency in MHz;
fo= output frequency in MHz;
CL= output load capacitance in pF;
VCC= supply voltage in Volts;
N = total load switching outputs;
∑(CL× V
2
× fo) = sum of outputs.
CC
2. The condition is VI= GND to VCC.
2004 Sep 15 2
Philips Semiconductors Product specification
Dual inverter 74LVC2G04
FUNCTION TABLE
See note 1.
INPUT OUTPUT
nA nY
LH
HL
Note
1. H = HIGH voltage level;
L = LOW voltage level.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
TEMPERATURE RANGE PINS PACKAGE MATERIAL CODE MARKING
74LVC2G04GW −40 °C to +125 °C 6 SC-88 plastic SOT363 V4
74LVC2G04GV −40 °C to +125 °C 6 SC-74 plastic SOT457 V04
74LVC2G04GM −40 °C to +125 °C 6 XSON6 plastic SOT886 V4
PINNING
PIN SYMBOL DESCRIPTION
1 1A data input
2 GND ground (0 V)
3 2A data input
4 2Y data output
5V
CC
supply voltage
6 1Y data output
04
1
1A 1Y
2
GND
2A 2Y
04
3
001aab649
6
5
V
CC
4
Fig.1 Pin configuration SC-88 and SC-74.
2004 Sep 15 3
1
1A
GND
2
2A
3
Transparent top view
1Y
6
V
5
2Y
4
001aab650
CC
Fig.2 Pin configuration XSON6.
Philips Semiconductors Product specification
Dual inverter 74LVC2G04
handbook, halfpage
1A
1
2A
3
1Y
2Y
MNB079
Fig.3 Logic symbol.
6
4
handbook, halfpage
1
3
1
1
6
4
MNB080
Fig.4 IEE/IEC logic symbol.
handbook, halfpage
A
Y
MNA110
Fig.5 Logic diagram (one driver).
2004 Sep 15 4
Philips Semiconductors Product specification
Dual inverter 74LVC2G04
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
V
I
V
O
T
amb
tr, t
f
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
I
IK
V
I
I
OK
V
O
I
O
ICC, I
GND
T
stg
P
D
supply voltage 1.65 5.5 V
input voltage 0 5.5 V
output voltage active mode 0 V
CC
V
VCC= 0 V; Power-down mode 0 5.5 V
operating ambient temperature −40 +125 °C
input rise and fall times VCC= 1.65 V to 2.7 V 0 20 ns/V
VCC= 2.7 V to 5.5 V 0 10 ns/V
supply voltage −0.5 +6.5 V
input diode current VI<0 V −−50 mA
input voltage note 1 −0.5 +6.5 V
output diode current VO>VCC or VO<0 V −±50 mA
output voltage active mode; notes 1 and 2 −0.5 VCC+ 0.5 V
Power-down mode; notes 1 and 2 −0.5 +6.5 V
output source or sink current VO=0 VtoV
CC
−±50 mA
VCC or GND current −±100 mA
storage temperature −65 +150 °C
power dissipation T
= −40 °C to +125 °C − 300 mW
amb
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. When VCC= 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
2004 Sep 15 5
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